A ZnO nanowire photodetector with an ir electrode integrated on a triple junction solar cell

A ZnO nanowire ultraviolet photodetecto with an iridium electrode fabricated on a GaInP/GaAs/Ge triple-junction solar cell. The ZnO NW PD can detect the UV light below 370 nm without detecting solar light. It should be noted that solar light was transformed to electrical power by the TJ solar cell and provided a light bias of 2.5 V for the PD. At a light bias of 2.5 V, the UV-to-visible rejection ratio of the ZnO NW PD with an Ir Schottky contact electrode was around 396, and the measured responsivity was 5.54 times; 10^-4 A/W.