A zno-nanowire phototransistor prepared on glass substrates

The fabrication of a phototransistor via the bridging of two prefabricated electrodes with a laterally grown ZnO nanowire is reported. It was found that the fabricated device is an n-channel enhancement-mode phototransistor with a dark carrier concentration of 6.34×10¹⁷ cm^-3 when the gate voltage is biased at 5 V. With an incident-light wavelength of 360 nm and a zero gate bias, it was found that the noise equivalent power and normalized detectivity (D*) of the fabricated ZnOphototransistor were 6.67 × 10^-17 W and 1.27 × 10¹³ cm Hz^0.5 W^-1, respectively. It was also found that the current in the device can be modulated efficiently by tuning the wavelength of the excitation source.