A ZnO/InN/GaN heterojunction photodetector with extended infrared response

Lung Hsing Hsu, Shun Chieh Hsu, Hsin Ying Lee, Yu Lin Tsai, Da Wei Lin, Hao Chung Kuo, Yi Chia Hwang, Yin Han Chen, Jr Hau He, Yuh Jen Cheng, Shih Yen Lin, Chien Chung Lin

研究成果: Conference contribution

摘要

An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.

原文English
主出版物標題2015 Conference on Lasers and Electro-Optics, CLEO 2015
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781557529688
出版狀態Published - 2015 八月 10
事件Conference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States
持續時間: 2015 五月 102015 五月 15

出版系列

名字Conference on Lasers and Electro-Optics Europe - Technical Digest
2015-August

Other

OtherConference on Lasers and Electro-Optics, CLEO 2015
國家United States
城市San Jose
期間15-05-1015-05-15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

指紋 深入研究「A ZnO/InN/GaN heterojunction photodetector with extended infrared response」主題。共同形成了獨特的指紋。

  • 引用此

    Hsu, L. H., Hsu, S. C., Lee, H. Y., Tsai, Y. L., Lin, D. W., Kuo, H. C., Hwang, Y. C., Chen, Y. H., He, J. H., Cheng, Y. J., Lin, S. Y., & Lin, C. C. (2015). A ZnO/InN/GaN heterojunction photodetector with extended infrared response. 於 2015 Conference on Lasers and Electro-Optics, CLEO 2015 [7183712] (Conference on Lasers and Electro-Optics Europe - Technical Digest; 卷 2015-August). Institute of Electrical and Electronics Engineers Inc..