A ZnO/InN/GaN heterojunction photodetector with extended infrared response

Lung Hsing Hsu, Shun Chieh Hsu, Hsin Ying Lee, Yu Lin Tsai, Da Wei Lin, Hao Chung Kuo, Yi Chia Hwang, Yin Han Chen, Jr Hau He, Yuh Jen Cheng, Shih Yen Lin, Chien Chung Lin

研究成果: Conference contribution

摘要

An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.

原文English
主出版物標題CLEO
主出版物子標題Science and Innovations, CLEO-SI 2015
發行者Optical Society of America (OSA)
頁數1
ISBN(電子)9781557529688
DOIs
出版狀態Published - 2015 五月 4
事件CLEO: Science and Innovations, CLEO-SI 2015 - San Jose, United States
持續時間: 2015 五月 102015 五月 15

出版系列

名字CLEO: Science and Innovations, CLEO-SI 2015

Other

OtherCLEO: Science and Innovations, CLEO-SI 2015
國家United States
城市San Jose
期間15-05-1015-05-15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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  • 引用此

    Hsu, L. H., Hsu, S. C., Lee, H. Y., Tsai, Y. L., Lin, D. W., Kuo, H. C., Hwang, Y. C., Chen, Y. H., He, J. H., Cheng, Y. J., Lin, S. Y., & Lin, C. C. (2015). A ZnO/InN/GaN heterojunction photodetector with extended infrared response. 於 CLEO: Science and Innovations, CLEO-SI 2015 (CLEO: Science and Innovations, CLEO-SI 2015). Optical Society of America (OSA). https://doi.org/10.1364/CLEO_SI.2015.SF1G.7