A ZnO/InN/GaN heterojunction photodetector with extended infrared response

  • Lung Hsing Hsu
  • , Shun Chieh Hsu
  • , Hsin Ying Lee
  • , Yu Lin Tsai
  • , Da Wei Lin
  • , Hao Chung Kuo
  • , Yi Chia Hwang
  • , Yin Han Chen
  • , Jr Hau He
  • , Yuh Jen Cheng
  • , Shih Yen Lin
  • , Chien Chung Lin

研究成果: Conference contribution

摘要

An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.

原文English
主出版物標題CLEO
主出版物子標題Science and Innovations, CLEO-SI 2015
發行者Optical Society of America (OSA)
頁數1
ISBN(電子)9781557529688
DOIs
出版狀態Published - 2015 5月 4
事件CLEO: Science and Innovations, CLEO-SI 2015 - San Jose, United States
持續時間: 2015 5月 102015 5月 15

出版系列

名字CLEO: Science and Innovations, CLEO-SI 2015

Other

OtherCLEO: Science and Innovations, CLEO-SI 2015
國家/地區United States
城市San Jose
期間15-05-1015-05-15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程
  • 原子與分子物理與光學

指紋

深入研究「A ZnO/InN/GaN heterojunction photodetector with extended infrared response」主題。共同形成了獨特的指紋。

引用此