A1GaN photodetectors prepared on Si substrates

Y. Z. Chiou, Y. C. Lin, C. K. Wang

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

A1GaN ultraviolet (UV) metal-semiconductor-metal (MSM) photodetectors (PDs) grown on silicon substrates were fabricated and characterized. With 5-V applied bias, it was found that dark current density of Al0.2Ga 0.7N PDs on silicon substrate was only 7.5 X 10-9 A/cm2. With an applied bias of 7 V, it was found that peak responsivities were 0.09 and 0.11 A/W while UV/visible rejection ratios (i.e., peak wavelength: 420 nm) were 324 and 278 for Al0.2Ga0.8N and Al0.3Ga0.7N MSM PDs, respectively. Moreover, the noise equivalent power of Al0.2Ga0.8N MSM PDs was estimated to be 3.5 x 10-12W.

原文English
頁(從 - 到)264-266
頁數3
期刊IEEE Electron Device Letters
28
發行號4
DOIs
出版狀態Published - 2007 四月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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