Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer

Hong Chih Chen, Kuan Ju Zhou, Po Hsun Chen, Guan Fu Chen, Shin Ping Huang, Jian Jie Chen, Chuan Wei Kuo, Yu Ching Tsao, Mao Chou Tai, An Kuo Chu, Wei Chih Lai, Ting Chang Chang

研究成果: Article

摘要

In this letter, we integrated a floating bottom gate (BG) as a light shielding layer in a thin-film transistor (TFT). We observed abnormal ID-VD output characteristics and unsaturated current characteristics. In addition, drain-induced barrier lowering has a significant impact on ID-VD characteristics as the drain voltage increases. These phenomena are due to changes in electrical potential that occur due to the capacitive coupling effect. Technology computer aided design simulations explained and correlated well with our observations. Then, a physical model is proposed to verify the abnormal electrical characteristics. Grounding the BG light shield was found to provide better control over the threshold voltage and total current performance. This letter results may lead to better applications in the TFT driving circuits.

原文English
文章編號8736827
頁(從 - 到)1281-1284
頁數4
期刊IEEE Electron Device Letters
40
發行號8
DOIs
出版狀態Published - 2019 八月

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此

Chen, H. C., Zhou, K. J., Chen, P. H., Chen, G. F., Huang, S. P., Chen, J. J., Kuo, C. W., Tsao, Y. C., Tai, M. C., Chu, A. K., Lai, W. C., & Chang, T. C. (2019). Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer. IEEE Electron Device Letters, 40(8), 1281-1284. [8736827]. https://doi.org/10.1109/LED.2019.2923098