Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer

Hong Chih Chen, Kuan Ju Zhou, Po Hsun Chen, Guan Fu Chen, Shin Ping Huang, Jian Jie Chen, Chuan Wei Kuo, Yu Ching Tsao, Mao Chou Tai, An Kuo Chu, Wei-Chi Lai, Ting Chang Chang

研究成果: Article

摘要

In this letter, we integrated a floating bottom gate (BG) as a light shielding layer in a thin-film transistor (TFT). We observed abnormal ID-VD output characteristics and unsaturated current characteristics. In addition, drain-induced barrier lowering has a significant impact on ID-VD characteristics as the drain voltage increases. These phenomena are due to changes in electrical potential that occur due to the capacitive coupling effect. Technology computer aided design simulations explained and correlated well with our observations. Then, a physical model is proposed to verify the abnormal electrical characteristics. Grounding the BG light shield was found to provide better control over the threshold voltage and total current performance. This letter results may lead to better applications in the TFT driving circuits.

原文English
文章編號8736827
頁(從 - 到)1281-1284
頁數4
期刊IEEE Electron Device Letters
40
發行號8
DOIs
出版狀態Published - 2019 八月 1

指紋

Thin film transistors
Shielding
Electric grounding
Threshold voltage
Computer aided design
Networks (circuits)
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Chen, H. C., Zhou, K. J., Chen, P. H., Chen, G. F., Huang, S. P., Chen, J. J., ... Chang, T. C. (2019). Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer. IEEE Electron Device Letters, 40(8), 1281-1284. [8736827]. https://doi.org/10.1109/LED.2019.2923098
Chen, Hong Chih ; Zhou, Kuan Ju ; Chen, Po Hsun ; Chen, Guan Fu ; Huang, Shin Ping ; Chen, Jian Jie ; Kuo, Chuan Wei ; Tsao, Yu Ching ; Tai, Mao Chou ; Chu, An Kuo ; Lai, Wei-Chi ; Chang, Ting Chang. / Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer. 於: IEEE Electron Device Letters. 2019 ; 卷 40, 編號 8. 頁 1281-1284.
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abstract = "In this letter, we integrated a floating bottom gate (BG) as a light shielding layer in a thin-film transistor (TFT). We observed abnormal ID-VD output characteristics and unsaturated current characteristics. In addition, drain-induced barrier lowering has a significant impact on ID-VD characteristics as the drain voltage increases. These phenomena are due to changes in electrical potential that occur due to the capacitive coupling effect. Technology computer aided design simulations explained and correlated well with our observations. Then, a physical model is proposed to verify the abnormal electrical characteristics. Grounding the BG light shield was found to provide better control over the threshold voltage and total current performance. This letter results may lead to better applications in the TFT driving circuits.",
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Chen, HC, Zhou, KJ, Chen, PH, Chen, GF, Huang, SP, Chen, JJ, Kuo, CW, Tsao, YC, Tai, MC, Chu, AK, Lai, W-C & Chang, TC 2019, 'Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer', IEEE Electron Device Letters, 卷 40, 編號 8, 8736827, 頁 1281-1284. https://doi.org/10.1109/LED.2019.2923098

Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer. / Chen, Hong Chih; Zhou, Kuan Ju; Chen, Po Hsun; Chen, Guan Fu; Huang, Shin Ping; Chen, Jian Jie; Kuo, Chuan Wei; Tsao, Yu Ching; Tai, Mao Chou; Chu, An Kuo; Lai, Wei-Chi; Chang, Ting Chang.

於: IEEE Electron Device Letters, 卷 40, 編號 8, 8736827, 01.08.2019, p. 1281-1284.

研究成果: Article

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T1 - Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer

AU - Chen, Hong Chih

AU - Zhou, Kuan Ju

AU - Chen, Po Hsun

AU - Chen, Guan Fu

AU - Huang, Shin Ping

AU - Chen, Jian Jie

AU - Kuo, Chuan Wei

AU - Tsao, Yu Ching

AU - Tai, Mao Chou

AU - Chu, An Kuo

AU - Lai, Wei-Chi

AU - Chang, Ting Chang

PY - 2019/8/1

Y1 - 2019/8/1

N2 - In this letter, we integrated a floating bottom gate (BG) as a light shielding layer in a thin-film transistor (TFT). We observed abnormal ID-VD output characteristics and unsaturated current characteristics. In addition, drain-induced barrier lowering has a significant impact on ID-VD characteristics as the drain voltage increases. These phenomena are due to changes in electrical potential that occur due to the capacitive coupling effect. Technology computer aided design simulations explained and correlated well with our observations. Then, a physical model is proposed to verify the abnormal electrical characteristics. Grounding the BG light shield was found to provide better control over the threshold voltage and total current performance. This letter results may lead to better applications in the TFT driving circuits.

AB - In this letter, we integrated a floating bottom gate (BG) as a light shielding layer in a thin-film transistor (TFT). We observed abnormal ID-VD output characteristics and unsaturated current characteristics. In addition, drain-induced barrier lowering has a significant impact on ID-VD characteristics as the drain voltage increases. These phenomena are due to changes in electrical potential that occur due to the capacitive coupling effect. Technology computer aided design simulations explained and correlated well with our observations. Then, a physical model is proposed to verify the abnormal electrical characteristics. Grounding the BG light shield was found to provide better control over the threshold voltage and total current performance. This letter results may lead to better applications in the TFT driving circuits.

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