Recrystallization was studied in 1 μm-thick Cu films electrodeposited using a two-stage strategy. In each stage, the film was deposited at either low or high current density. The effect of varying the thickness of the layer deposited at high current density on the recrystallization rate was investigated. The recrystallization kinetics were determined using resistivity and electron back-scatter diffraction (EBSD) techniques. Recrystallization rate increases with the thickness of the layer deposited at high current density independent of the order of deposition.
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