摘要
A microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way to activate the acceptors in Mg-doped p-type GaN layer. The activation of Mg dopant in p-type GaN layer may be explained as the breaking of magnesium-hydrogen bonding due to the microwave energy absorption.
原文 | English |
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頁(從 - 到) | 312-313 |
頁數 | 2 |
期刊 | Applied Physics Letters |
卷 | 78 |
發行號 | 3 |
DOIs | |
出版狀態 | Published - 2001 一月 15 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)