Acceptor activation of Mg-doped GaN by microwave treatment

Shoou Jinn Chang, Yan Kuin Su, Tzong Liang Tsai, Chung Ying Chang, Chih Lih Chiang, Chih Sung Chang, Tzer Peng Chen, Kuo Hsin Huang

研究成果: Article同行評審

28 引文 斯高帕斯(Scopus)

摘要

A microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way to activate the acceptors in Mg-doped p-type GaN layer. The activation of Mg dopant in p-type GaN layer may be explained as the breaking of magnesium-hydrogen bonding due to the microwave energy absorption.

原文English
頁(從 - 到)312-313
頁數2
期刊Applied Physics Letters
78
發行號3
DOIs
出版狀態Published - 2001 一月 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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