Acceptor activation of Mg-doped GaN by microwave treatment

Shoou Jinn Chang; Yan Kuin Su; Tzong Liang Tsai; Chung Ying Chang; Chih Lih Chiang; Chih Sung Chang; Tzer Peng Chen; Kuo Hsin Huang

doi:10.1063/1.1340864

Acceptor activation of Mg-doped GaN by microwave treatment

Shoou Jinn Chang, Yan Kuin Su, Tzong Liang Tsai, Chung Ying Chang, Chih Lih Chiang, Chih Sung Chang, Tzer Peng Chen, Kuo Hsin Huang

研究成果: Article › 同行評審

28 引文斯高帕斯（Scopus）

摘要

A microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way to activate the acceptors in Mg-doped p-type GaN layer. The activation of Mg dopant in p-type GaN layer may be explained as the breaking of magnesium-hydrogen bonding due to the microwave energy absorption.

原文	English
頁（從 - 到）	312-313
頁數	2
期刊	Applied Physics Letters
卷	78
發行號	3
DOIs	https://doi.org/10.1063/1.1340864
出版狀態	Published - 2001 一月 15

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1340864

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AU - Chiang, Chih Lih

AU - Chang, Chih Sung

AU - Chen, Tzer Peng

AU - Huang, Kuo Hsin

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