Acceptor activation of Mg-doped GaN by microwave treatment

Shoou Jinn Chang; Yan Kuin Su; Tzong Liang Tsai; Chung Ying Chang; Chih Lih Chiang; Chih Sung Chang; Tzer Peng Chen; Kuo Hsin Huang

doi:10.1063/1.1340864

Acceptor activation of Mg-doped GaN by microwave treatment

Shoou Jinn Chang, Yan Kuin Su, Tzong Liang Tsai, Chung Ying Chang, Chih Lih Chiang, Chih Sung Chang, Tzer Peng Chen, Kuo Hsin Huang

研究成果: Article › 同行評審

30 引文斯高帕斯（Scopus）

摘要

A microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way to activate the acceptors in Mg-doped p-type GaN layer. The activation of Mg dopant in p-type GaN layer may be explained as the breaking of magnesium-hydrogen bonding due to the microwave energy absorption.

原文	English
頁（從 - 到）	312-313
頁數	2
期刊	Applied Physics Letters
卷	78
發行號	3
DOIs	https://doi.org/10.1063/1.1340864
出版狀態	Published - 2001 1月 15

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

存取文件

10.1063/1.1340864

其它文件與鏈接

引用此

@article{f63de896993e4015a4d05d2017449f1a,

title = "Acceptor activation of Mg-doped GaN by microwave treatment",

abstract = "A microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way to activate the acceptors in Mg-doped p-type GaN layer. The activation of Mg dopant in p-type GaN layer may be explained as the breaking of magnesium-hydrogen bonding due to the microwave energy absorption.",

author = "Chang, {Shoou Jinn} and Su, {Yan Kuin} and Tsai, {Tzong Liang} and Chang, {Chung Ying} and Chiang, {Chih Lih} and Chang, {Chih Sung} and Chen, {Tzer Peng} and Huang, {Kuo Hsin}",

year = "2001",

month = jan,

day = "15",

doi = "10.1063/1.1340864",

language = "English",

volume = "78",

pages = "312--313",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Acceptor activation of Mg-doped GaN by microwave treatment

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

AU - Tsai, Tzong Liang

AU - Chang, Chung Ying

AU - Chiang, Chih Lih

AU - Chang, Chih Sung

AU - Chen, Tzer Peng

AU - Huang, Kuo Hsin

PY - 2001/1/15

Y1 - 2001/1/15

N2 - A microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way to activate the acceptors in Mg-doped p-type GaN layer. The activation of Mg dopant in p-type GaN layer may be explained as the breaking of magnesium-hydrogen bonding due to the microwave energy absorption.

AB - A microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way to activate the acceptors in Mg-doped p-type GaN layer. The activation of Mg dopant in p-type GaN layer may be explained as the breaking of magnesium-hydrogen bonding due to the microwave energy absorption.

UR - http://www.scopus.com/inward/record.url?scp=0001093967&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001093967&partnerID=8YFLogxK

U2 - 10.1063/1.1340864

DO - 10.1063/1.1340864

M3 - Article

AN - SCOPUS:0001093967

VL - 78

SP - 312

EP - 313

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

ER -

Acceptor activation of Mg-doped GaN by microwave treatment

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此