Acceptor states in boron doped SiGe quantum wells

K. Schmalz, M. S. Kagan, I. V. Altukhov, K. A. Korolev, D. V. Orlov, V. P. Sinis, S. G. Tomas, K. L. Wang, I. N. Yassievich

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2 引文 斯高帕斯(Scopus)

摘要

The temperature dependences of lateral conductivity and hole mobility in SiGe quantum well structures selectively doped with boron are presented. The boron A+ centers are found to exist and determine the low-temperature conductivity. The activation energy of conductivity at higher temperatures is shown to be determined by the energy distance between strain-split boron A0 centers. The model of two-stage excitation of free holes including the thermal activation of holes from the ground to split-off state and next tunneling into the valence band is proposed. The binding energy of A+ centers and the energy splitting of boron ground states by strain are found.

原文English
頁(從 - 到)1613-1618
頁數6
期刊Materials Science Forum
258-263
發行號9993
DOIs
出版狀態Published - 1997

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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