Achievement of 110-nm-Wide Spectral Width in Monolithic Tunnel-Junction Light-Emitting Diode

Man Fang Huang, Ya Hsuan Shih, Jih Yuan Chang, Yen Lung Huang, Jinn Kong Sheu, Yen Kuang Kuo

研究成果: Article同行評審

摘要

Characterization and structural design on monolithic stacked InGaN light-emitting diode (LED) are investigated numerically in an attempt to pursue multicolor light emission and wide spectral width. Crucial physical properties such as the energy band configurations, carrier distributions, and interband transitions are analyzed in detail, which are also utilized as an aid to justify the desired characteristics of the LED structures under study. The compositions of multi-quantum wells, as well as the thicknesses of quantum barriers in each unit stacked LED are appropriately adjusted to simplify the tandem LED structure and optimize the overall emission spectra. Upon optimization, a monolithic tunnel-junction LED with an emission spectral width of approximately 110 nm, full width at half maximum, is demonstrated with only three unit stacked LEDs and two tunnel junctions.

原文English
文章編號9429246
期刊IEEE Journal of Quantum Electronics
57
發行號4
DOIs
出版狀態Published - 2021 八月

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學
  • 凝聚態物理學
  • 電氣與電子工程

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