Achievement of 110-nm-Wide Spectral Width in Monolithic Tunnel-Junction Light-Emitting Diode

Man Fang Huang; Ya Hsuan Shih; Jih Yuan Chang; Yen Lung Huang; Jinn Kong Sheu; Yen Kuang Kuo

doi:10.1109/JQE.2021.3079419

Achievement of 110-nm-Wide Spectral Width in Monolithic Tunnel-Junction Light-Emitting Diode

Man Fang Huang, Ya Hsuan Shih, Jih Yuan Chang, Yen Lung Huang, Jinn Kong Sheu, Yen Kuang Kuo

光電科學與工程學系

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Characterization and structural design on monolithic stacked InGaN light-emitting diode (LED) are investigated numerically in an attempt to pursue multicolor light emission and wide spectral width. Crucial physical properties such as the energy band configurations, carrier distributions, and interband transitions are analyzed in detail, which are also utilized as an aid to justify the desired characteristics of the LED structures under study. The compositions of multi-quantum wells, as well as the thicknesses of quantum barriers in each unit stacked LED are appropriately adjusted to simplify the tandem LED structure and optimize the overall emission spectra. Upon optimization, a monolithic tunnel-junction LED with an emission spectral width of approximately 110 nm, full width at half maximum, is demonstrated with only three unit stacked LEDs and two tunnel junctions.

原文	English
文章編號	9429246
期刊	IEEE Journal of Quantum Electronics
卷	57
發行號	4
DOIs	https://doi.org/10.1109/JQE.2021.3079419
出版狀態	Published - 2021 8月

All Science Journal Classification (ASJC) codes

原子與分子物理與光學
凝聚態物理學
電氣與電子工程

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10.1109/JQE.2021.3079419

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title = "Achievement of 110-nm-Wide Spectral Width in Monolithic Tunnel-Junction Light-Emitting Diode",

abstract = "Characterization and structural design on monolithic stacked InGaN light-emitting diode (LED) are investigated numerically in an attempt to pursue multicolor light emission and wide spectral width. Crucial physical properties such as the energy band configurations, carrier distributions, and interband transitions are analyzed in detail, which are also utilized as an aid to justify the desired characteristics of the LED structures under study. The compositions of multi-quantum wells, as well as the thicknesses of quantum barriers in each unit stacked LED are appropriately adjusted to simplify the tandem LED structure and optimize the overall emission spectra. Upon optimization, a monolithic tunnel-junction LED with an emission spectral width of approximately 110 nm, full width at half maximum, is demonstrated with only three unit stacked LEDs and two tunnel junctions. ",

author = "Huang, {Man Fang} and Shih, {Ya Hsuan} and Chang, {Jih Yuan} and Huang, {Yen Lung} and Sheu, {Jinn Kong} and Kuo, {Yen Kuang}",

note = "Funding Information: Manuscript received January 14, 2021; revised April 30, 2021; accepted May 6, 2021. Date of publication May 12, 2021; date of current version May 28, 2021. This work was supported by the Ministry of Science and Technology, Taiwan, under Contract MOST-109-2112-M-018-007, Contract MOST-108-2112-M-018-005, and Contract MOST-107-2221-E-006-187-MY3. (Corresponding author: Man-Fang Huang.) Man-Fang Huang and Yen-Lung Huang are with the Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (e-mail: mfhuang@cc.ncue.edu.tw). Publisher Copyright: {\textcopyright} 1965-2012 IEEE.",

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doi = "10.1109/JQE.2021.3079419",

language = "English",

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AU - Huang, Man Fang

AU - Shih, Ya Hsuan

AU - Chang, Jih Yuan

AU - Huang, Yen Lung

AU - Sheu, Jinn Kong

AU - Kuo, Yen Kuang

N1 - Funding Information: Manuscript received January 14, 2021; revised April 30, 2021; accepted May 6, 2021. Date of publication May 12, 2021; date of current version May 28, 2021. This work was supported by the Ministry of Science and Technology, Taiwan, under Contract MOST-109-2112-M-018-007, Contract MOST-108-2112-M-018-005, and Contract MOST-107-2221-E-006-187-MY3. (Corresponding author: Man-Fang Huang.) Man-Fang Huang and Yen-Lung Huang are with the Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (e-mail: mfhuang@cc.ncue.edu.tw). Publisher Copyright: © 1965-2012 IEEE.

PY - 2021/8

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N2 - Characterization and structural design on monolithic stacked InGaN light-emitting diode (LED) are investigated numerically in an attempt to pursue multicolor light emission and wide spectral width. Crucial physical properties such as the energy band configurations, carrier distributions, and interband transitions are analyzed in detail, which are also utilized as an aid to justify the desired characteristics of the LED structures under study. The compositions of multi-quantum wells, as well as the thicknesses of quantum barriers in each unit stacked LED are appropriately adjusted to simplify the tandem LED structure and optimize the overall emission spectra. Upon optimization, a monolithic tunnel-junction LED with an emission spectral width of approximately 110 nm, full width at half maximum, is demonstrated with only three unit stacked LEDs and two tunnel junctions.

AB - Characterization and structural design on monolithic stacked InGaN light-emitting diode (LED) are investigated numerically in an attempt to pursue multicolor light emission and wide spectral width. Crucial physical properties such as the energy band configurations, carrier distributions, and interband transitions are analyzed in detail, which are also utilized as an aid to justify the desired characteristics of the LED structures under study. The compositions of multi-quantum wells, as well as the thicknesses of quantum barriers in each unit stacked LED are appropriately adjusted to simplify the tandem LED structure and optimize the overall emission spectra. Upon optimization, a monolithic tunnel-junction LED with an emission spectral width of approximately 110 nm, full width at half maximum, is demonstrated with only three unit stacked LEDs and two tunnel junctions.

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Achievement of 110-nm-Wide Spectral Width in Monolithic Tunnel-Junction Light-Emitting Diode

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