TY - JOUR
T1 - Activation characterization of non-evaporable Ti-Zr-V getter films by synchrotron radiation photoemission spectroscopy
AU - Li, Chien Cheng
AU - Huang, Jow Lay
AU - Lin, Ran Jin
AU - Lii, Ding Fwu
AU - Chen, Chia Hao
N1 - Funding Information:
The research was financially supported by the National Science Council, Taiwan, ROC under contract No. NSC 95-2221-E230-008 and NCKU Project of Promoting Academic Excellence & Developing World Class Research Centers : D96-2700. The authors also would like to thank the National Synchrotron Radiation Research Center, Hsinchu, Taiwan, ROC, for equipment access and technical support.
PY - 2009/8/31
Y1 - 2009/8/31
N2 - The effect of activation temperature on the degree of reduction of dense and porous TiZrV films was investigated by synchrotron radiation photoemission spectroscopy. The dense and porous TiZrV films have similar composition and thickness, and their specific surface areas are 2 m2/g and 13 m2/g, respectively. Comparing the previous results of the porous TiZrV film [Chien-Cheng Li, Jow-Lay Huang, Ran-Jin Lin, Chia-Hao Chen, Ding-Fwu Lii, Thin Solid Films 515, (2006) 1121.], the degree of activation of the porous TiZrV film is lower than that of the dense TiZrV film. To complete the activation treatment of the dense and porous TiZrV films, the activation temperature must be higher than 350 °C or the activation time must be longer than 30 min.
AB - The effect of activation temperature on the degree of reduction of dense and porous TiZrV films was investigated by synchrotron radiation photoemission spectroscopy. The dense and porous TiZrV films have similar composition and thickness, and their specific surface areas are 2 m2/g and 13 m2/g, respectively. Comparing the previous results of the porous TiZrV film [Chien-Cheng Li, Jow-Lay Huang, Ran-Jin Lin, Chia-Hao Chen, Ding-Fwu Lii, Thin Solid Films 515, (2006) 1121.], the degree of activation of the porous TiZrV film is lower than that of the dense TiZrV film. To complete the activation treatment of the dense and porous TiZrV films, the activation temperature must be higher than 350 °C or the activation time must be longer than 30 min.
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U2 - 10.1016/j.tsf.2007.06.102
DO - 10.1016/j.tsf.2007.06.102
M3 - Article
AN - SCOPUS:66949168772
VL - 517
SP - 5876
EP - 5880
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 20
ER -