摘要
The effect of activation temperature on the degree of reduction of dense and porous TiZrV films was investigated by synchrotron radiation photoemission spectroscopy. The dense and porous TiZrV films have similar composition and thickness, and their specific surface areas are 2 m2/g and 13 m2/g, respectively. Comparing the previous results of the porous TiZrV film [Chien-Cheng Li, Jow-Lay Huang, Ran-Jin Lin, Chia-Hao Chen, Ding-Fwu Lii, Thin Solid Films 515, (2006) 1121.], the degree of activation of the porous TiZrV film is lower than that of the dense TiZrV film. To complete the activation treatment of the dense and porous TiZrV films, the activation temperature must be higher than 350 °C or the activation time must be longer than 30 min.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 5876-5880 |
| 頁數 | 5 |
| 期刊 | Thin Solid Films |
| 卷 | 517 |
| 發行號 | 20 |
| DOIs | |
| 出版狀態 | Published - 2009 八月 31 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Metals and Alloys
- Surfaces, Coatings and Films
- Surfaces and Interfaces
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引用此
Li, C. C., Huang, J-L., Lin, R. J., Lii, D. F., & Chen, C. H. (2009). Activation characterization of non-evaporable Ti-Zr-V getter films by synchrotron radiation photoemission spectroscopy. Thin Solid Films, 517(20), 5876-5880. https://doi.org/10.1016/j.tsf.2007.06.102