Activation energy of n-GaN epitaxial layers grown on vicinal-cut sapphire substrates

J. C. Lin, Y. K. Su, S. J. Chang, W. R. Chen, R. Y. Chen, Y. C. Cheng, W. J. Lin

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

Si-doped GaN epitaxial layers were grown on 0° and 1° tilted sapphire substrates by metalorganic chemical vapor deposition (MOVCD). It was found that GaN epitaxial layers on tilted substrates were grown with step-flow mode while those on untilted substrates were grown with spiral growth mode. It was also found that number of compensating acceptor, NCOM, equals 1.5×1017 and 8.7×1016 cm-3 for GaN epitaxial layers grown on 0° and 1° tilted sapphire substrates, respectively. Furthermore, it was found that there existed two values of activation energy of 15.2 and 23 meV for the GaN epitaxial layer grown on untilted sapphire substrate. In contrast, only the activation energy of 15.2 meV was found from the GaN epitaxial layer grown on 1° tilted sapphire substrate.

原文English
頁(從 - 到)481-485
頁數5
期刊Journal of Crystal Growth
285
發行號4
DOIs
出版狀態Published - 2005 12月 15

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 無機化學
  • 材料化學

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