In this study, low-energy microwave annealing(MWA) is used to activate the germanium material which is new promising and might replace silicon in the future. A novel MWA method with two steps applies to germanium for solid phase epitaxial recrystallization(SPER) and dopants activation. The purpose of the first step MWA at 2P(1.2kW) for 75 sec is to quickly repair the destroyed crystal lattices which are caused by ion implantation to achieve the SPER. The second step MWA at 1.5P(0.9kW) for 300 sec is used to activate the phosphorus dopants effectively without diffusion and de-activation. The target dopant activation level concentration will be more than 1020 cm-3, and sheet resistance decreases to 78 ohm/sq.