Activation of high concentrations of phosphorus in germanium by two-steps microwave annealing

Wen Hsi Lee, Tzu Lang Shih, Chia Wei Lin, Yi Chen Chung

研究成果: Conference contribution

摘要

In this study, low-energy microwave annealing(MWA) is used to activate the germanium material which is new promising and might replace silicon in the future. A novel MWA method with two steps applies to germanium for solid phase epitaxial recrystallization(SPER) and dopants activation. The purpose of the first step MWA at 2P(1.2kW) for 75 sec is to quickly repair the destroyed crystal lattices which are caused by ion implantation to achieve the SPER. The second step MWA at 1.5P(0.9kW) for 300 sec is used to activate the phosphorus dopants effectively without diffusion and de-activation. The target dopant activation level concentration will be more than 1020 cm-3, and sheet resistance decreases to 78 ohm/sq.

原文English
主出版物標題2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781509007264
DOIs
出版狀態Published - 2016 九月 27
事件21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States
持續時間: 2016 六月 122016 六月 13

出版系列

名字2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

Other

Other21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
國家United States
城市Honolulu
期間16-06-1216-06-13

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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