A/D converter using InGaAs/InAlAs resonant-tunneling diodes

Tai Haur Kuo, Hung C. Lin, Robert C. Potter, Dave Shupe

研究成果: Paper

8 引文 斯高帕斯(Scopus)

摘要

A novel A/D (analog/digital) converter based on the multiwell resonant-tunneling diode (RTD) is described. By using RTDs, the A/D circuit complexity can be reduced. The authors simulated the performance of a 4-bit A/D converter digitizing a triangular wave with the digital output changing at a 30-GHz rate. The results show that the approach holds the promise of greatly increased speed and reduced circuit complexity and power in comparison to state-of-the-art flash A/Ds. The results from breadboard circuits and SPICE3 simulations are very encouraging.

原文English
頁面265-273
頁數9
出版狀態Published - 1989 十二月 1
事件Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
持續時間: 1989 八月 71989 八月 9

Other

OtherProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
城市Ithaca, NY, USA
期間89-08-0789-08-09

    指紋

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此

Kuo, T. H., Lin, H. C., Potter, R. C., & Shupe, D. (1989). A/D converter using InGaAs/InAlAs resonant-tunneling diodes. 265-273. 論文發表於 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, .