摘要
A novel A/D (analog/digital) converter based on the multiwell resonant-tunneling diode (RTD) is described. By using RTDs, the A/D circuit complexity can be reduced. The authors simulated the performance of a 4-bit A/D converter digitizing a triangular wave with the digital output changing at a 30-GHz rate. The results show that the approach holds the promise of greatly increased speed and reduced circuit complexity and power in comparison to state-of-the-art flash A/Ds. The results from breadboard circuits and SPICE3 simulations are very encouraging.
| 原文 | English |
|---|---|
| 頁面 | 265-273 |
| 頁數 | 9 |
| 出版狀態 | Published - 1989 十二月 1 |
| 事件 | Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA 持續時間: 1989 八月 7 → 1989 八月 9 |
Other
| Other | Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits |
|---|---|
| 城市 | Ithaca, NY, USA |
| 期間 | 89-08-07 → 89-08-09 |
指紋
All Science Journal Classification (ASJC) codes
- Engineering(all)
引用此
Kuo, T. H., Lin, H. C., Potter, R. C., & Shupe, D. (1989). A/D converter using InGaAs/InAlAs resonant-tunneling diodes. 265-273. 論文發表於 Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, .