Addition of Na into CuInS2 thin film via co-evaporation

Wen Jen Tsai, Chia Hung Tsai, Chih Hui Chang, Jyh Ming Ting, Rui Ren Wang

研究成果: Article同行評審

24 引文 斯高帕斯(Scopus)

摘要

While most of studies focus on the addition of Na into CuInGaSe2 as well as CuInGaS2 thin films, this study examines the addition of Na into CuInS2 (CIS) thin films. Moreover, an alternative approach has been used to incorporate Na into CIS thin films. Two source evaporation (Cu and In) was first performed to obtain Cu-In layers with desired thicknesses. Three source evaporation (Cu, In, and NaF) then followed subsequently to produce Na-doped Cu-In precursor films having different Na concentrations. The precursor films were immediately sulfurized in the same evaporation chamber to form CIS thin films. The addition of Na was found to enhance (112) preferred orientation and reduce the grain size. Raman spectra show that the addition of Na does not alter the needed phase transformation from CuInS2-CuAu structure to CuInS2-chalcopyrite structure during the sulfurization. Blue shift of the CIS Raman CH mode occurs as a result. The doping of Na was also found to decrease the film resistivity or increase the hole concentration in the films.

原文English
頁(從 - 到)1712-1716
頁數5
期刊Thin Solid Films
519
發行號5
DOIs
出版狀態Published - 2010 12月 30

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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