Admittance spectroscopy in CZTSSe: Metastability behavior and voltage dependent defect study

Mark J. Koeper; Charles J. Hages; Jian V. Li; Dean Levi; Rakesh Agrawal

doi:10.1109/PVSC.2017.8366501

Admittance spectroscopy in CZTSSe: Metastability behavior and voltage dependent defect study

Mark J. Koeper, Charles J. Hages, Jian V. Li, Dean Levi, Rakesh Agrawal

航空太空工程學系

研究成果: Conference contribution

摘要

Admittance spectroscopy has been performed on a CZTSSe device with a carrier injection pretreatment and under electronically relaxed conditions to demonstrate metastability behavior. We show that the measurements with the carrier injection pretreatment demonstrate two admittance signatures while the relaxed measurement demonstrates only one admittance signature with a different activation energy. Additionally, voltage dependent admittance spectroscopy was performed using the carrier injection pretreatment method at each of the applied voltage bias. The activation energies of the two admittance signatures were calculated and are shown to be independent of the voltage bias.

原文	English
主出版物標題	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	206-209
頁數	4
ISBN（電子）	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366501
出版狀態	Published - 2017
事件	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States 持續時間: 2017 6月 25 → 2017 6月 30

出版系列

名字	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
國家/地區	United States
城市	Washington
期間	17-06-25 → 17-06-30

All Science Journal Classification (ASJC) codes

可再生能源、永續發展與環境
電氣與電子工程
電子、光磁材料

UN SDG

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10.1109/PVSC.2017.8366501

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Koeper, M. J., Hages, C. J., Li, J. V., Levi, D., & Agrawal, R. (2017). Admittance spectroscopy in CZTSSe: Metastability behavior and voltage dependent defect study. 於 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (頁 206-209). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366501

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title = "Admittance spectroscopy in CZTSSe: Metastability behavior and voltage dependent defect study",

abstract = "Admittance spectroscopy has been performed on a CZTSSe device with a carrier injection pretreatment and under electronically relaxed conditions to demonstrate metastability behavior. We show that the measurements with the carrier injection pretreatment demonstrate two admittance signatures while the relaxed measurement demonstrates only one admittance signature with a different activation energy. Additionally, voltage dependent admittance spectroscopy was performed using the carrier injection pretreatment method at each of the applied voltage bias. The activation energies of the two admittance signatures were calculated and are shown to be independent of the voltage bias.",

author = "Koeper, {Mark J.} and Hages, {Charles J.} and Li, {Jian V.} and Dean Levi and Rakesh Agrawal",

note = "Funding Information: This work was supported by the DOE through a nonproprietary partnering (NPO) with NREL, NSF Solar Economy IGERT 0903670-DGE, and the Solar Energy Research Institute for India and the United States (SERIIUS) DE AC36-08G028308. The authors would like to thank Dr. Sukgeun Choi for his assistance and discussion throughout the NPO project. Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

doi = "10.1109/PVSC.2017.8366501",

language = "English",

series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "206--209",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

address = "United States",

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Koeper, MJ, Hages, CJ, Li, JV, Levi, D & Agrawal, R 2017, Admittance spectroscopy in CZTSSe: Metastability behavior and voltage dependent defect study. 於 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., 頁 206-209, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 17-06-25. https://doi.org/10.1109/PVSC.2017.8366501

Admittance spectroscopy in CZTSSe : Metastability behavior and voltage dependent defect study. / Koeper, Mark J.; Hages, Charles J.; Li, Jian V. 等.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 206-209 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

研究成果: Conference contribution

TY - GEN

T1 - Admittance spectroscopy in CZTSSe

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

AU - Koeper, Mark J.

AU - Hages, Charles J.

AU - Li, Jian V.

AU - Levi, Dean

AU - Agrawal, Rakesh

N1 - Funding Information: This work was supported by the DOE through a nonproprietary partnering (NPO) with NREL, NSF Solar Economy IGERT 0903670-DGE, and the Solar Energy Research Institute for India and the United States (SERIIUS) DE AC36-08G028308. The authors would like to thank Dr. Sukgeun Choi for his assistance and discussion throughout the NPO project. Publisher Copyright: © 2017 IEEE.

PY - 2017

Y1 - 2017

N2 - Admittance spectroscopy has been performed on a CZTSSe device with a carrier injection pretreatment and under electronically relaxed conditions to demonstrate metastability behavior. We show that the measurements with the carrier injection pretreatment demonstrate two admittance signatures while the relaxed measurement demonstrates only one admittance signature with a different activation energy. Additionally, voltage dependent admittance spectroscopy was performed using the carrier injection pretreatment method at each of the applied voltage bias. The activation energies of the two admittance signatures were calculated and are shown to be independent of the voltage bias.

AB - Admittance spectroscopy has been performed on a CZTSSe device with a carrier injection pretreatment and under electronically relaxed conditions to demonstrate metastability behavior. We show that the measurements with the carrier injection pretreatment demonstrate two admittance signatures while the relaxed measurement demonstrates only one admittance signature with a different activation energy. Additionally, voltage dependent admittance spectroscopy was performed using the carrier injection pretreatment method at each of the applied voltage bias. The activation energies of the two admittance signatures were calculated and are shown to be independent of the voltage bias.

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DO - 10.1109/PVSC.2017.8366501

M3 - Conference contribution

AN - SCOPUS:85048498550

T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

SP - 206

EP - 209

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 25 June 2017 through 30 June 2017

ER -

Koeper MJ, Hages CJ, Li JV, Levi D, Agrawal R. Admittance spectroscopy in CZTSSe: Metastability behavior and voltage dependent defect study. 於 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 206-209. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). doi: 10.1109/PVSC.2017.8366501

Admittance spectroscopy in CZTSSe: Metastability behavior and voltage dependent defect study

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