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Advanced low damage manufacturing processes to fabricate SOI FinFETs and measurement of electrical properties
Ashish Kumar,
Wen Hsi Lee
, Y. L. Wang
電機工程學系
奈米積體電路工程碩士學位學程
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Physics & Astronomy
SOI (semiconductors)
85%
neutral beams
66%
manufacturing
64%
electrical properties
57%
damage
55%
microwaves
52%
annealing
46%
etching
44%
D region
27%
scaling
27%
fins
23%
ions
18%
activation
15%
degradation
14%
transmission electron microscopy
12%
thresholds
11%
fabrication
11%
shift
11%
room temperature
10%
Engineering & Materials Science
FinFET
100%
Electric properties
83%
Annealing
77%
Microwaves
68%
Etching
63%
Reactive ion etching
52%
Ions
35%
D region
32%
Transmission electron microscopy
20%
Chemical activation
17%
Semiconductor materials
17%
Degradation
13%
Temperature
7%
Chemical Compounds
Electrical Property
65%
Microwave
63%
Annealing
61%
Etching
52%
TEM Image
21%
Ion
15%
Compound Mobility
14%
Semiconductor
14%
Resistance
12%
Ambient Reaction Temperature
10%