Al-doped MgZnO/p-AlGaN heterojunction and their application in ultraviolet photodetectors

Kuang Po Hsueh, Po Wei Cheng, Wen Yen Lin, Hsien Chin Chiu, Jinn-Kong Sheu, Yu Hsiang Yeh

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

In this study, n-type Al-doped MgxZn1-xO (AMZO) films were deposited onto p-Al0.08Ga0.92N by using radiofrequency magnetron sputtering followed by annealing at 800°C in nitrogen ambient for 60 s. The film was highly transparent and had transmittances exceeding 95% in the visible region and a sharp absorption edge visible in the ultraviolet region. A high leakage current was obtained in the current-voltage (I-V) characteristics of the GMZO/AlGaN n-p junction diode. The AMZO/AlGaN photodetector based on the AMZO film exhibited a dark current of 1.56 μA at Vbias =-3V. The peak responsivity of the photodetector was approximately 200 nm and a cutoff wavelength was observed at approximately 250 nm.

原文English
主出版物標題International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2014
編輯Aulia Nasution
發行者SPIE
ISBN(電子)9781628415599
DOIs
出版狀態Published - 2015 一月 1
事件International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2014 - Sanur, Bali, Indonesia
持續時間: 2014 十月 142014 十月 15

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
9444
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Other

OtherInternational Seminar on Photonics, Optics, and Its Applications, ISPhOA 2014
國家/地區Indonesia
城市Sanur, Bali
期間14-10-1414-10-15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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