Al-Doped ZnO/Silicon-rich Oxide Superlattices with High Room-Temperature Thermoelectric Figure of Merit

Hsuan Ta Wu, Chun Wei Pao, You Chun Su, Chuan-Feng Shih

研究成果: Article

2 引文 (Scopus)

摘要

This research reports the thermoelectric properties of the Al-doped ZnO (AZO)/silicon-rich oxide (SRO) superlattices. The thermoelectric figure of merit (ZT) as functions of the grain size, thickness of the superlattices, the number of SRO layers, and conductance were studied. The use of the SRO layers markedly improved the thermoelectric ZT. Moreover, the replacement of ZnO by AZO further increased the ZT. The ZT value of the AZO/SRO superlattices was as high as 0.44 when the total thickness was 45 nm and three SRO interlayers were inserted. The improvement of ZT was contributed by the reduction of the grain size, formation of the Si nanocrystals and the increase in the electrical conductance caused by using SRO interlayers and Al doping.

原文English
頁(從 - 到)33-36
頁數4
期刊Materials Letters
245
DOIs
出版狀態Published - 2019 六月 15

指紋

Superlattices
Silicon
silicon oxides
figure of merit
Oxides
superlattices
room temperature
Temperature
interlayers
grain size
Nanocrystals
nanocrystals
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

引用此文

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title = "Al-Doped ZnO/Silicon-rich Oxide Superlattices with High Room-Temperature Thermoelectric Figure of Merit",
abstract = "This research reports the thermoelectric properties of the Al-doped ZnO (AZO)/silicon-rich oxide (SRO) superlattices. The thermoelectric figure of merit (ZT) as functions of the grain size, thickness of the superlattices, the number of SRO layers, and conductance were studied. The use of the SRO layers markedly improved the thermoelectric ZT. Moreover, the replacement of ZnO by AZO further increased the ZT. The ZT value of the AZO/SRO superlattices was as high as 0.44 when the total thickness was 45 nm and three SRO interlayers were inserted. The improvement of ZT was contributed by the reduction of the grain size, formation of the Si nanocrystals and the increase in the electrical conductance caused by using SRO interlayers and Al doping.",
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Al-Doped ZnO/Silicon-rich Oxide Superlattices with High Room-Temperature Thermoelectric Figure of Merit. / Wu, Hsuan Ta; Pao, Chun Wei; Su, You Chun; Shih, Chuan-Feng.

於: Materials Letters, 卷 245, 15.06.2019, p. 33-36.

研究成果: Article

TY - JOUR

T1 - Al-Doped ZnO/Silicon-rich Oxide Superlattices with High Room-Temperature Thermoelectric Figure of Merit

AU - Wu, Hsuan Ta

AU - Pao, Chun Wei

AU - Su, You Chun

AU - Shih, Chuan-Feng

PY - 2019/6/15

Y1 - 2019/6/15

N2 - This research reports the thermoelectric properties of the Al-doped ZnO (AZO)/silicon-rich oxide (SRO) superlattices. The thermoelectric figure of merit (ZT) as functions of the grain size, thickness of the superlattices, the number of SRO layers, and conductance were studied. The use of the SRO layers markedly improved the thermoelectric ZT. Moreover, the replacement of ZnO by AZO further increased the ZT. The ZT value of the AZO/SRO superlattices was as high as 0.44 when the total thickness was 45 nm and three SRO interlayers were inserted. The improvement of ZT was contributed by the reduction of the grain size, formation of the Si nanocrystals and the increase in the electrical conductance caused by using SRO interlayers and Al doping.

AB - This research reports the thermoelectric properties of the Al-doped ZnO (AZO)/silicon-rich oxide (SRO) superlattices. The thermoelectric figure of merit (ZT) as functions of the grain size, thickness of the superlattices, the number of SRO layers, and conductance were studied. The use of the SRO layers markedly improved the thermoelectric ZT. Moreover, the replacement of ZnO by AZO further increased the ZT. The ZT value of the AZO/SRO superlattices was as high as 0.44 when the total thickness was 45 nm and three SRO interlayers were inserted. The improvement of ZT was contributed by the reduction of the grain size, formation of the Si nanocrystals and the increase in the electrical conductance caused by using SRO interlayers and Al doping.

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