Al-doping effect on structural, transport and optical properties of ZnO films by simultaneous RF and DC magnetron sputtering

J. J. Lu, S. Y. Tsai, Y. M. Lu, T. C. Lin, K. J. Gan

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

Transparent and conductive Al-doped ZnO films have been prepared by simultaneous RF and DC magnetron sputtering. In order to study the properties of the Al-doped ZnO films, we performed X-ray diffraction, X-ray absorption spectroscopy, temperature dependence of electrical resistance and Hall measurements, as well as optical transmission spectroscopy. The results revealed that all the samples were polycrystalline with a strong preferential c-axis orientation. A minimum resistivity of 7.13 × 1 0- 3 Ω cm was obtained, and a metallic-type conducting behavior was observed for the film at 50 W. Our present work suggests that the electrical transport property of the Al-doped ZnO films is closely related to the crystallinity. A large number of defects due to poor crystallinity and the induced stress field are able to immobilize the free carrier thereby reducing the conductivity.

原文English
頁(從 - 到)2177-2180
頁數4
期刊Solid State Communications
149
發行號47-48
DOIs
出版狀態Published - 2009 12月

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 凝聚態物理學
  • 材料化學

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