Al₂O₃-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al₂O₃/TiO₂ Passivation Oxides

Ching Sung Lee, Xue Cheng Yao, Yi Ping Huang, Wei Chou Hsu

研究成果: Article

摘要

Novel Al₂O₃-dielectric InAlN/AlN/GaN Γ-Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al₂O₃/TiO₂ passivation oxides formed by using ultrasonic spray pyrolysis deposition (USPD)/RF sputtering, respectively, are investigated. The Γ-gate includes a 1-μm long active gate on the Al₂O₃ dielectric and a 1-μm long field-plate (FP) on the composite Al₂O₃/TiO₂ oxides. The present Γ-Gate MOS-HFET has demonstrated excellent on/off current ratio (Ion/Ioff) of 8.2 × 10¹⁰, subthreshold swing (SS) of 102.3 mV/dec, maximum extrinsic transconductance of (gm, max) of 210.1 mS/mm, maximum drain-source saturation current density (IDS, max) of 868.3 mA/mm, two-terminal off-state gate-drain breakdown voltage (BVGD) of -311.2 V, three-terminal drain-source breakdown voltage (BVDS) of 237 V at VGS = -10 V, and power-added efficiency (P.A.E.) of 39.9% at 2.4 GHz. A conventional Schottky-gate HFET and TiO₂-dielectric MOS-HFET were also prepared in comparison. The present design has shown superior DC/RF device performance. It is suitable for high-power RF circuit applications.

原文English
期刊IEEE Journal of the Electron Devices Society
DOIs
出版狀態Accepted/In press - 2018 一月 1

指紋

Semiconductors
High electron mobility transistors
Passivation
Oxides
Metals
Electric breakdown
Composite materials
Spray pyrolysis
Transconductance
Sputtering
Current density
Ultrasonics
Ions
Networks (circuits)
Oxide semiconductors
Equipment and Supplies

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

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abstract = "Novel Al₂O₃-dielectric InAlN/AlN/GaN Γ-Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al₂O₃/TiO₂ passivation oxides formed by using ultrasonic spray pyrolysis deposition (USPD)/RF sputtering, respectively, are investigated. The Γ-gate includes a 1-μm long active gate on the Al₂O₃ dielectric and a 1-μm long field-plate (FP) on the composite Al₂O₃/TiO₂ oxides. The present Γ-Gate MOS-HFET has demonstrated excellent on/off current ratio (Ion/Ioff) of 8.2 × 10¹⁰, subthreshold swing (SS) of 102.3 mV/dec, maximum extrinsic transconductance of (gm, max) of 210.1 mS/mm, maximum drain-source saturation current density (IDS, max) of 868.3 mA/mm, two-terminal off-state gate-drain breakdown voltage (BVGD) of -311.2 V, three-terminal drain-source breakdown voltage (BVDS) of 237 V at VGS = -10 V, and power-added efficiency (P.A.E.) of 39.9{\%} at 2.4 GHz. A conventional Schottky-gate HFET and TiO₂-dielectric MOS-HFET were also prepared in comparison. The present design has shown superior DC/RF device performance. It is suitable for high-power RF circuit applications.",
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AU - Lee, Ching Sung

AU - Yao, Xue Cheng

AU - Huang, Yi Ping

AU - Hsu, Wei Chou

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AB - Novel Al₂O₃-dielectric InAlN/AlN/GaN Γ-Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al₂O₃/TiO₂ passivation oxides formed by using ultrasonic spray pyrolysis deposition (USPD)/RF sputtering, respectively, are investigated. The Γ-gate includes a 1-μm long active gate on the Al₂O₃ dielectric and a 1-μm long field-plate (FP) on the composite Al₂O₃/TiO₂ oxides. The present Γ-Gate MOS-HFET has demonstrated excellent on/off current ratio (Ion/Ioff) of 8.2 × 10¹⁰, subthreshold swing (SS) of 102.3 mV/dec, maximum extrinsic transconductance of (gm, max) of 210.1 mS/mm, maximum drain-source saturation current density (IDS, max) of 868.3 mA/mm, two-terminal off-state gate-drain breakdown voltage (BVGD) of -311.2 V, three-terminal drain-source breakdown voltage (BVDS) of 237 V at VGS = -10 V, and power-added efficiency (P.A.E.) of 39.9% at 2.4 GHz. A conventional Schottky-gate HFET and TiO₂-dielectric MOS-HFET were also prepared in comparison. The present design has shown superior DC/RF device performance. It is suitable for high-power RF circuit applications.

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