AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron- mobility transistor with low temperature liquid phase deposited Al 2O3 gate insulator

Sarbani Basu, Pramod K. Singh, Po Wen Sze, Yeong Her Wang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

AlGaAs/InGaAs/GaAs metal-oxide-semiconductor-pseudomorphic high electron mobility transistors (MOS-PHEMTs) with Al2 O3 as a gate dielectric oxide prepared in low-temperature liquid phase deposition (LPD) are presented in this study. The Al2 O3 films on the GaAs substrates are characterized by means of x-ray photoelectron spectroscopy, Auger electron spectroscopy, scanning electron microscopy, Fourier transform infrared spectroscopy, and atomic force microscopy. The applications to depletion mode n -channel GaAs MOS-PHEMTs showed larger gate swing voltage, lower gate leakage current, higher breakdown voltage, higher drain current density, and maximum extrinsic transconductance compared to conventional AlGaAs/InGaAs PHEMTs. This demonstrates that LPD Al2 O3 could be a suitable candidate for future gate insulator applications.

原文English
文章編號054116
期刊Journal of Applied Physics
104
發行號5
DOIs
出版狀態Published - 2008

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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