The investigation describes AlGaAs/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistors (MOS-PHEMTs). The gate dielectric is obtained by oxidizing AlGaAs in liquid phase. The MOS-PHEMTs have a larger gate swing voltage, a lower gate leakage current and a higher breakdown voltage than their counterpart PHEMTs do.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry