AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron- mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric

Kuan Wei Lee, Po Wen Sze, Yeong-Her Wang, Mau-phon Houng

研究成果: Article

14 引文 斯高帕斯(Scopus)

摘要

The investigation describes AlGaAs/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistors (MOS-PHEMTs). The gate dielectric is obtained by oxidizing AlGaAs in liquid phase. The MOS-PHEMTs have a larger gate swing voltage, a lower gate leakage current and a higher breakdown voltage than their counterpart PHEMTs do.

原文English
頁(從 - 到)213-217
頁數5
期刊Solid-State Electronics
49
發行號2
DOIs
出版狀態Published - 2005 二月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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