AlGaInP-based LEDs with a p+-GaP window layer and a thermally annealed ITO contact

H. M. Lo, S. C. Shei, X. F. Zeng, Shoou Jinn Chang, Hsieh Yen Lin

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

In this paper, indium-tin-oxide (ITO) films were deposited on p-type GaP films with a AuBe-diffused metal layer to form ohmic contacts. Without the AuBe diffused into p-GaP films, the ITO deposited on p-GaP showed a non-ohmic characteristic. After the AuBe diffused, the ITO deposited on p-GaP displayed a linear current-voltage characteristic and the specific contact resistance showed 2.63 × 10-4ω-cm2. Furthermore, the specific contact resistance could be improved to 1.57 × 10-4ω- cm2 when the sample post-ITO-deposition annealed at 400°C. The transmittance of ITO film almost was kept at 90% in the wavelength range of 400700 nm after thermal annealing. These results revealed that the ITO films can be a suitable transparent current spreading layer for the fabrication of AlGaInP-based light-emitting diodes with an AuBe-diffused metal layer. It was also found that the 20 mA forward voltages measured from LEDs with Device A, Device B, Device C and Device D were 1.97, 1.96, 1.95 and 2.66 V and the light output powers were 4.2, 5.7, 6.0 and 6.3 mW, respectively.

原文English
文章編號5764940
頁(從 - 到)803-809
頁數7
期刊IEEE Journal of Quantum Electronics
47
發行號6
DOIs
出版狀態Published - 2011

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

指紋 深入研究「AlGaInP-based LEDs with a p<sup>+</sup>-GaP window layer and a thermally annealed ITO contact」主題。共同形成了獨特的指紋。

引用此