TY - JOUR
T1 - AlGaInP-based LEDs with a p+-GaP window layer and a thermally annealed ITO contact
AU - Lo, H. M.
AU - Shei, S. C.
AU - Zeng, X. F.
AU - Chang, Shoou Jinn
AU - Lin, Hsieh Yen
N1 - Funding Information:
Manuscript received January 7, 2011; revised February 7, 2011 and February 14, 2011; accepted February 16, 2011. Date of current version May 6, 2011. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, the Advanced Optoelectronic Technology Center, National Cheng Kung University, under project, from the Ministry of Education, Taiwan, the Ministry of Economic Affairs, under Grant NSC 98-EC-17-A-09020769 and Grant NSC 98-2221-E158-006, and the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract 98-D0204-6.
PY - 2011
Y1 - 2011
N2 - In this paper, indium-tin-oxide (ITO) films were deposited on p-type GaP films with a AuBe-diffused metal layer to form ohmic contacts. Without the AuBe diffused into p-GaP films, the ITO deposited on p-GaP showed a non-ohmic characteristic. After the AuBe diffused, the ITO deposited on p-GaP displayed a linear current-voltage characteristic and the specific contact resistance showed 2.63 × 10-4ω-cm2. Furthermore, the specific contact resistance could be improved to 1.57 × 10-4ω- cm2 when the sample post-ITO-deposition annealed at 400°C. The transmittance of ITO film almost was kept at 90% in the wavelength range of 400700 nm after thermal annealing. These results revealed that the ITO films can be a suitable transparent current spreading layer for the fabrication of AlGaInP-based light-emitting diodes with an AuBe-diffused metal layer. It was also found that the 20 mA forward voltages measured from LEDs with Device A, Device B, Device C and Device D were 1.97, 1.96, 1.95 and 2.66 V and the light output powers were 4.2, 5.7, 6.0 and 6.3 mW, respectively.
AB - In this paper, indium-tin-oxide (ITO) films were deposited on p-type GaP films with a AuBe-diffused metal layer to form ohmic contacts. Without the AuBe diffused into p-GaP films, the ITO deposited on p-GaP showed a non-ohmic characteristic. After the AuBe diffused, the ITO deposited on p-GaP displayed a linear current-voltage characteristic and the specific contact resistance showed 2.63 × 10-4ω-cm2. Furthermore, the specific contact resistance could be improved to 1.57 × 10-4ω- cm2 when the sample post-ITO-deposition annealed at 400°C. The transmittance of ITO film almost was kept at 90% in the wavelength range of 400700 nm after thermal annealing. These results revealed that the ITO films can be a suitable transparent current spreading layer for the fabrication of AlGaInP-based light-emitting diodes with an AuBe-diffused metal layer. It was also found that the 20 mA forward voltages measured from LEDs with Device A, Device B, Device C and Device D were 1.97, 1.96, 1.95 and 2.66 V and the light output powers were 4.2, 5.7, 6.0 and 6.3 mW, respectively.
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U2 - 10.1109/JQE.2011.2118744
DO - 10.1109/JQE.2011.2118744
M3 - Article
AN - SCOPUS:79955955720
SN - 0018-9197
VL - 47
SP - 803
EP - 809
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
IS - 6
M1 - 5764940
ER -