AlGaInP-based LEDs with AuBe-diffused AZO/GaP current spreading layer

Shoou Jinn Chang; Xu Feng Zeng; Shih Chang Shei; Shuguang Li

doi:10.1109/JQE.2013.2280065

AlGaInP-based LEDs with AuBe-diffused AZO/GaP current spreading layer

Shoou Jinn Chang, Xu Feng Zeng, Shih Chang Shei, Shuguang Li

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

We report the use of Al-doped ZnO (AZO) as the current spreading layer for AlGaInP-based light-emitting diodes (LEDs). It was found that AZO could form good ohmic contact with AuBe-diffused p-GaP. It was also found that the specific contact resistance could be further reduced from 2.68 X 10^-4 to 1.52 X 10^-4Ωcm² by performing rapid thermal annealing at 400°C for 5 min in N₂ ambient. Furthermore, it was found that output power of the LEDs with AZO current spreading layer was 6.2% larger than that of the LEDs with indium-tin-oxide current spreading layer. It was also found that LEDs with AZO current spreading layer also exhibit good electrical properties and good reliability.

原文	English
文章編號	6587778
頁（從 - 到）	846-851
頁數	6
期刊	IEEE Journal of Quantum Electronics
卷	49
發行號	10
DOIs	https://doi.org/10.1109/JQE.2013.2280065
出版狀態	Published - 2013

All Science Journal Classification (ASJC) codes

原子與分子物理與光學
凝聚態物理學
電氣與電子工程

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10.1109/JQE.2013.2280065

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引用此

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title = "AlGaInP-based LEDs with AuBe-diffused AZO/GaP current spreading layer",

abstract = "We report the use of Al-doped ZnO (AZO) as the current spreading layer for AlGaInP-based light-emitting diodes (LEDs). It was found that AZO could form good ohmic contact with AuBe-diffused p-GaP. It was also found that the specific contact resistance could be further reduced from 2.68 X 10-4 to 1.52 X 10-4Ωcm2 by performing rapid thermal annealing at 400°C for 5 min in N2 ambient. Furthermore, it was found that output power of the LEDs with AZO current spreading layer was 6.2% larger than that of the LEDs with indium-tin-oxide current spreading layer. It was also found that LEDs with AZO current spreading layer also exhibit good electrical properties and good reliability.",

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AlGaInP-based LEDs with AuBe-diffused AZO/GaP current spreading layer

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