AlGaInP-based LEDs with AuBe-diffused AZO/GaP current spreading layer

Shoou-Jinn Chang, Xu Feng Zeng, Shih Chang Shei, Shuguang Li

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

We report the use of Al-doped ZnO (AZO) as the current spreading layer for AlGaInP-based light-emitting diodes (LEDs). It was found that AZO could form good ohmic contact with AuBe-diffused p-GaP. It was also found that the specific contact resistance could be further reduced from 2.68 X 10-4 to 1.52 X 10-4Ωcm2 by performing rapid thermal annealing at 400°C for 5 min in N2 ambient. Furthermore, it was found that output power of the LEDs with AZO current spreading layer was 6.2% larger than that of the LEDs with indium-tin-oxide current spreading layer. It was also found that LEDs with AZO current spreading layer also exhibit good electrical properties and good reliability.

原文English
文章編號6587778
頁(從 - 到)846-851
頁數6
期刊IEEE Journal of Quantum Electronics
49
發行號10
DOIs
出版狀態Published - 2013 九月 25

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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