TY - GEN
T1 - AlGaInP-based LEDs with ZnO nanostructures by successive ionic layer adsorption and reaction and hydrothermal methods
AU - Lin, Nan Ming
AU - Shei, Shih Chang
AU - Chang, Shoou-Jinn
PY - 2015/6/23
Y1 - 2015/6/23
N2 - The authors applied a simple and low-cost successive ionic layer adsorption and reaction (SILAR) and hydrothermal method (Hm) methods to form ZnO nanostructures for AlGaInP-based light-emitting diodes (LEDs). With 20 mA current injection, it was found that forward voltages were all 2.0 V when the 20mA output powers were 0.41, 0.53, 0.56, 0.60, and 0.50 mW for LED I, LED II, LED III, LED IV, and LED V, respectively. Furthermore, it was also found that the formation of the ZnO nanostructure on the top of GaP surface did not degrade the electrical properties.
AB - The authors applied a simple and low-cost successive ionic layer adsorption and reaction (SILAR) and hydrothermal method (Hm) methods to form ZnO nanostructures for AlGaInP-based light-emitting diodes (LEDs). With 20 mA current injection, it was found that forward voltages were all 2.0 V when the 20mA output powers were 0.41, 0.53, 0.56, 0.60, and 0.50 mW for LED I, LED II, LED III, LED IV, and LED V, respectively. Furthermore, it was also found that the formation of the ZnO nanostructure on the top of GaP surface did not degrade the electrical properties.
UR - http://www.scopus.com/inward/record.url?scp=84939447923&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84939447923&partnerID=8YFLogxK
U2 - 10.1109/ISNE.2015.7131953
DO - 10.1109/ISNE.2015.7131953
M3 - Conference contribution
AN - SCOPUS:84939447923
T3 - 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015
BT - 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 4th International Symposium on Next-Generation Electronics, IEEE ISNE 2015
Y2 - 4 May 2015 through 6 May 2015
ER -