AlGaInP LEDs prepared by contact-transferred and mask-embedded lithography

H. M. Lo, Y. T. Hsieh, S. C. Shei, Y. C. Lee, X. F. Zeng, W. Y. Weng, N. M. Lin, S. J. Chang

研究成果: Article

7 引文 斯高帕斯(Scopus)

摘要

The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of AlGaInP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.39, 2.29, 2.39, 2.24, 2.21, and 2.25-V while the 20 mA output powers were 1.43, 1.42, 1.38, 1.35, 1.28, 1.22, and 1.16 mW for CMEL-400-nm LED, CMEL-600-nm LED, CMEL-800-nm LED, CMEL-1-μm LED, CMEL-2-μm LED, CMEL-3-μm and the conventional LED without CMEL, respectively.

原文English
文章編號5638356
頁(從 - 到)1837-1839
頁數3
期刊IEEE Journal of Quantum Electronics
46
發行號12
DOIs
出版狀態Published - 2010 十一月 29

    指紋

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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