TY - JOUR
T1 - AlGaInP LEDs prepared by contact-transferred and mask-embedded lithography
AU - Lo, H. M.
AU - Hsieh, Y. T.
AU - Shei, S. C.
AU - Lee, Y. C.
AU - Zeng, X. F.
AU - Weng, W. Y.
AU - Lin, N. M.
AU - Chang, S. J.
N1 - Funding Information:
Manuscript received November 17, 2009; revised March 22, 2010; accepted April 11, 2010. Date of current version November 24, 2010. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University (NCKU), Tainan, Taiwan, under projects from the Ministry of Education, and in part by the National Science Council (NSC) of Taiwan, under Project NSC 96-2628-E-006-079-MY3. This work was also supported by the Bureau of Energy, Ministry of Economic Affairs of Taiwan, under Contract 98-D0204-6, and by the LED Lighting and Research Center, NCKU, for the assistance of LED measurements. This paper was recommended by Associate Editor L. J. Mawst.
PY - 2010
Y1 - 2010
N2 - The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of AlGaInP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.39, 2.29, 2.39, 2.24, 2.21, and 2.25-V while the 20 mA output powers were 1.43, 1.42, 1.38, 1.35, 1.28, 1.22, and 1.16 mW for CMEL-400-nm LED, CMEL-600-nm LED, CMEL-800-nm LED, CMEL-1-μm LED, CMEL-2-μm LED, CMEL-3-μm and the conventional LED without CMEL, respectively.
AB - The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of AlGaInP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.39, 2.29, 2.39, 2.24, 2.21, and 2.25-V while the 20 mA output powers were 1.43, 1.42, 1.38, 1.35, 1.28, 1.22, and 1.16 mW for CMEL-400-nm LED, CMEL-600-nm LED, CMEL-800-nm LED, CMEL-1-μm LED, CMEL-2-μm LED, CMEL-3-μm and the conventional LED without CMEL, respectively.
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U2 - 10.1109/JQE.2010.2048742
DO - 10.1109/JQE.2010.2048742
M3 - Article
AN - SCOPUS:78649303205
SN - 0018-9197
VL - 46
SP - 1834
EP - 1839
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
IS - 12
M1 - 5638356
ER -