AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer

S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang, T. P. Chen

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

A novel tensile strain barrier cladding (TSBC) structure is proposed which can effectively increase the potential barrier of the AlGaInP yellow-green light-emitting diodes (LED's). It was found that the electroluminescence intensity of the multiquantum well (MQW) + TSBC AlGaInP 573-nm LED is twice as large as that of the conventional MQW AlGaInP LED emitting at the same wavelength. It was also found that the MQW+TSBC AlGaInP LED is less heat sensitive than the MQW and MQW + multiquantum barrier (MQB) AlGaInP LED's. These results indicate that the MQW+TSBC LED is useful particularly under high-temperature operation.

原文English
頁(從 - 到)1199-1201
頁數3
期刊IEEE Photonics Technology Letters
9
發行號9
DOIs
出版狀態Published - 1997 九月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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