A novel tensile strain barrier cladding (TSBC) structure is proposed which can effectively increase the potential barrier of the AlGaInP yellow-green light-emitting diodes (LED's). It was found that the electroluminescence intensity of the multiquantum well (MQW) + TSBC AlGaInP 573-nm LED is twice as large as that of the conventional MQW AlGaInP LED emitting at the same wavelength. It was also found that the MQW+TSBC AlGaInP LED is less heat sensitive than the MQW and MQW + multiquantum barrier (MQB) AlGaInP LED's. These results indicate that the MQW+TSBC LED is useful particularly under high-temperature operation.
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