AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology

Shoou Jinn Chang; Jinn Kong Sheu; Yan Kuin Su; Ming Jiunn Jou; Gou Chung Chi

doi:10.1143/jjap.35.4199

AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology

Shoou Jinn Chang
, Jinn Kong Sheu
, Yan Kuin Su
, Ming Jiunn Jou
, Gou Chung Chi

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

摘要

An AlGaInP/GaP light-emitting diode was fabricated by wafer direct bonding technique. The device was grown on GaAs substrate by metalorganic vapor phase epitaxy (MOVPE). After bonding the n-GaP substrate on top of the epitaxial layers, the original GaAs substrate was removed. The luminous intensity of this wafer-bonded device is around 60mcd/S_r at an operation current of 20 mA. It is about two times brighter than the conventional device with absorbing GaAs substrate. The large lattice constant mismatch (3.6%) between wafer-bonded GaP substrate and GaInP did not degrade the device characteristics.

原文	English
頁（從 - 到）	4199-4202
頁數	4
期刊	Japanese Journal of Applied Physics
卷	35
發行號	8
DOIs	https://doi.org/10.1143/jjap.35.4199
出版狀態	Published - 1996 8月

All Science Journal Classification (ASJC) codes

一般工程
一般物理與天文學

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10.1143/jjap.35.4199

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title = "AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology",

abstract = "An AlGaInP/GaP light-emitting diode was fabricated by wafer direct bonding technique. The device was grown on GaAs substrate by metalorganic vapor phase epitaxy (MOVPE). After bonding the n-GaP substrate on top of the epitaxial layers, the original GaAs substrate was removed. The luminous intensity of this wafer-bonded device is around 60mcd/Sr at an operation current of 20 mA. It is about two times brighter than the conventional device with absorbing GaAs substrate. The large lattice constant mismatch (3.6\%) between wafer-bonded GaP substrate and GaInP did not degrade the device characteristics.",

author = "Chang, \{Shoou Jinn\} and Sheu, \{Jinn Kong\} and Su, \{Yan Kuin\} and Jou, \{Ming Jiunn\} and Chi, \{Gou Chung\}",

year = "1996",

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AU - Chang, Shoou Jinn

AU - Sheu, Jinn Kong

AU - Su, Yan Kuin

AU - Jou, Ming Jiunn

AU - Chi, Gou Chung

PY - 1996/8

Y1 - 1996/8

N2 - An AlGaInP/GaP light-emitting diode was fabricated by wafer direct bonding technique. The device was grown on GaAs substrate by metalorganic vapor phase epitaxy (MOVPE). After bonding the n-GaP substrate on top of the epitaxial layers, the original GaAs substrate was removed. The luminous intensity of this wafer-bonded device is around 60mcd/Sr at an operation current of 20 mA. It is about two times brighter than the conventional device with absorbing GaAs substrate. The large lattice constant mismatch (3.6%) between wafer-bonded GaP substrate and GaInP did not degrade the device characteristics.

AB - An AlGaInP/GaP light-emitting diode was fabricated by wafer direct bonding technique. The device was grown on GaAs substrate by metalorganic vapor phase epitaxy (MOVPE). After bonding the n-GaP substrate on top of the epitaxial layers, the original GaAs substrate was removed. The luminous intensity of this wafer-bonded device is around 60mcd/Sr at an operation current of 20 mA. It is about two times brighter than the conventional device with absorbing GaAs substrate. The large lattice constant mismatch (3.6%) between wafer-bonded GaP substrate and GaInP did not degrade the device characteristics.

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DO - 10.1143/jjap.35.4199

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SN - 0021-4922

VL - 35

SP - 4199

EP - 4202

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 8

ER -

AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology

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