AlGaN-based ultraviolet photodetector with micropillar structures

Wei-Chi Lai, Li Chi Peng, Chien Chun Chen, Jinn-Kong Sheu, Shih Chang Shei

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

We demonstrated a single AlGaN layer with two different Al contents on the GaN μ -pillars template. It was found by the selective wavelength spatial cathodoluminescence images that the emission wavelengths of the AlGaN layer were at 345 and 325 nm on the side of the cone and on the top and valley surface of pillars, respectively. The Schottky-type photodetectors were also demonstrated on double Al contents of deposited AlGaN on GaN micropillar templates. The three steps of responses occurred at about 326, 346, and 356 nm with responsivities of 1.1× 10-2, 5.9× 10-3, and 4.04× 10-3 A/W, respectively.

原文English
文章編號102104
期刊Applied Physics Letters
96
發行號10
DOIs
出版狀態Published - 2010 三月 26

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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