摘要
We demonstrated a single AlGaN layer with two different Al contents on the GaN μ -pillars template. It was found by the selective wavelength spatial cathodoluminescence images that the emission wavelengths of the AlGaN layer were at 345 and 325 nm on the side of the cone and on the top and valley surface of pillars, respectively. The Schottky-type photodetectors were also demonstrated on double Al contents of deposited AlGaN on GaN micropillar templates. The three steps of responses occurred at about 326, 346, and 356 nm with responsivities of 1.1× 10-2, 5.9× 10-3, and 4.04× 10-3 A/W, respectively.
原文 | English |
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文章編號 | 102104 |
期刊 | Applied Physics Letters |
卷 | 96 |
發行號 | 10 |
DOIs | |
出版狀態 | Published - 2010 三月 26 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)