AlGaN films grown on (0001) sapphire by a two-step method

C. F. Shih, N. C. Chen, S. Y. Lin, K. S. Liu

研究成果: Article同行評審

31 引文 斯高帕斯(Scopus)

摘要

A two-step growth method, commonly used for GaN on sapphire, was applied to grow high-quality Al0.2 Ga0.8 N on sapphire. Comparing to the one grown on a low-temperature grown AlN buffer layer, the decomposition, recrystallization, and islands coalescence processes of the two-step growth increased the surface flatness, the crystal quality, the electrical property, suppressed the phase separation, and released the biaxial tensile strain. A 2.0 μm thick high-quality crack-free nearly GaN-free Al0.2 Ga0.8 N epilayer was obtained.

原文English
文章編號211103
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
86
發行號21
DOIs
出版狀態Published - 2005 五月 23

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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