AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers

T. K. Ko, Shoou-Jinn Chang, Y. K. Su, M. L. Lee, C. S. Chang, Yu-Cheng Lin, S. C. Shei, Jinn-Kong Sheu, W. S. Chen, C. F. Shen

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

AlGaN/GaN Schottky-barrier photodetectors with 7.5, 15, 30 and 60-nm-thick low temperature GaN cap layers were fabricated. It was found that dark currents were small for these detectors. With an incident light wavelength of 320 nm, it was found that measured peak responsivities were 0.07, 0.05 and 0.03 A/W while UV to visible rejection ratios were 700, 160 and 20 for the photodetectors with 15, 30 and 60-nm-thick low temperature GaN cap layers, respectively.

原文English
頁(從 - 到)68-71
頁數4
期刊Journal of Crystal Growth
283
發行號1-2
DOIs
出版狀態Published - 2005 九月 15

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 無機化學
  • 材料化學

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