AlGaN metal-semiconductor-metal photodetectors with low-temperature AlN cap layer and recessed electrodes

Chin Hsiang Chen, Shoou Jinn Chang, Ming Hsien Wu, Sung Yi Tsai, Hsiu Ju Chien

研究成果: Article

14 引文 (Scopus)

摘要

Al0.16Ga0.84N 320nm near-solar-blind ultraviolet (UV) metal-semiconductor-metal photodetectors (MSM-PDs) with a low-temperature AlN (LTAlN) layer and inductively coupled plasma (ICP) recessed electrodes were successfully fabricated. Compared with the conventional MSM-PDs, it was found that the measured photocurrent was much larger for the MSM-PD with the LT-AlN layer and ICP recessed electrodes. The responsivity of the MSM-PD with the LT-AlN layer and ICP recessed electrodes was also found to be larger, which could be attributed to the ICPetching-induced photoconductive gain.

原文English
文章編號04DG05
期刊Japanese journal of applied physics
49
發行號4 PART 2
DOIs
出版狀態Published - 2010 四月 1

指紋

Photodetectors
caps
photometers
Semiconductor materials
Electrodes
electrodes
plasma electrodes
Metals
metals
Inductively coupled plasma
Temperature
Photocurrents
photocurrents

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

引用此文

Chen, Chin Hsiang ; Chang, Shoou Jinn ; Wu, Ming Hsien ; Tsai, Sung Yi ; Chien, Hsiu Ju. / AlGaN metal-semiconductor-metal photodetectors with low-temperature AlN cap layer and recessed electrodes. 於: Japanese journal of applied physics. 2010 ; 卷 49, 編號 4 PART 2.
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AlGaN metal-semiconductor-metal photodetectors with low-temperature AlN cap layer and recessed electrodes. / Chen, Chin Hsiang; Chang, Shoou Jinn; Wu, Ming Hsien; Tsai, Sung Yi; Chien, Hsiu Ju.

於: Japanese journal of applied physics, 卷 49, 編號 4 PART 2, 04DG05, 01.04.2010.

研究成果: Article

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T1 - AlGaN metal-semiconductor-metal photodetectors with low-temperature AlN cap layer and recessed electrodes

AU - Chen, Chin Hsiang

AU - Chang, Shoou Jinn

AU - Wu, Ming Hsien

AU - Tsai, Sung Yi

AU - Chien, Hsiu Ju

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