AlGaN metal-semiconductor-metal photodetectors with low-temperature AlN cap layer and recessed electrodes

Chin Hsiang Chen, Shoou Jinn Chang, Ming Hsien Wu, Sung Yi Tsai, Hsiu Ju Chien

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

Al0.16Ga0.84N 320nm near-solar-blind ultraviolet (UV) metal-semiconductor-metal photodetectors (MSM-PDs) with a low-temperature AlN (LTAlN) layer and inductively coupled plasma (ICP) recessed electrodes were successfully fabricated. Compared with the conventional MSM-PDs, it was found that the measured photocurrent was much larger for the MSM-PD with the LT-AlN layer and ICP recessed electrodes. The responsivity of the MSM-PD with the LT-AlN layer and ICP recessed electrodes was also found to be larger, which could be attributed to the ICPetching-induced photoconductive gain.

原文English
文章編號04DG05
期刊Japanese journal of applied physics
49
發行號4 PART 2
DOIs
出版狀態Published - 2010 四月

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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