AlGaN metal-semiconductor-metal photodetectors with low-temperature AlN cap layer and recessed electrodes

Chin Hsiang Chen; Shoou Jinn Chang; Ming Hsien Wu; Sung Yi Tsai; Hsiu Ju Chien

doi:10.1143/JJAP.49.04DG05

AlGaN metal-semiconductor-metal photodetectors with low-temperature AlN cap layer and recessed electrodes

Chin Hsiang Chen, Shoou Jinn Chang, Ming Hsien Wu, Sung Yi Tsai, Hsiu Ju Chien

微電子工程研究所

研究成果: Article › 同行評審

18 引文斯高帕斯（Scopus）

摘要

Al_0.16Ga_0.84N 320nm near-solar-blind ultraviolet (UV) metal-semiconductor-metal photodetectors (MSM-PDs) with a low-temperature AlN (LTAlN) layer and inductively coupled plasma (ICP) recessed electrodes were successfully fabricated. Compared with the conventional MSM-PDs, it was found that the measured photocurrent was much larger for the MSM-PD with the LT-AlN layer and ICP recessed electrodes. The responsivity of the MSM-PD with the LT-AlN layer and ICP recessed electrodes was also found to be larger, which could be attributed to the ICPetching-induced photoconductive gain.

原文	English
文章編號	04DG05
期刊	Japanese journal of applied physics
卷	49
發行號	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.49.04DG05
出版狀態	Published - 2010 4月

All Science Journal Classification (ASJC) codes

一般工程
一般物理與天文學

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10.1143/JJAP.49.04DG05

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abstract = "Al0.16Ga0.84N 320nm near-solar-blind ultraviolet (UV) metal-semiconductor-metal photodetectors (MSM-PDs) with a low-temperature AlN (LTAlN) layer and inductively coupled plasma (ICP) recessed electrodes were successfully fabricated. Compared with the conventional MSM-PDs, it was found that the measured photocurrent was much larger for the MSM-PD with the LT-AlN layer and ICP recessed electrodes. The responsivity of the MSM-PD with the LT-AlN layer and ICP recessed electrodes was also found to be larger, which could be attributed to the ICPetching-induced photoconductive gain.",

author = "Chen, {Chin Hsiang} and Chang, {Shoou Jinn} and Wu, {Ming Hsien} and Tsai, {Sung Yi} and Chien, {Hsiu Ju}",

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doi = "10.1143/JJAP.49.04DG05",

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T1 - AlGaN metal-semiconductor-metal photodetectors with low-temperature AlN cap layer and recessed electrodes

AU - Chen, Chin Hsiang

AU - Chang, Shoou Jinn

AU - Wu, Ming Hsien

AU - Tsai, Sung Yi

AU - Chien, Hsiu Ju

PY - 2010/4

Y1 - 2010/4

N2 - Al0.16Ga0.84N 320nm near-solar-blind ultraviolet (UV) metal-semiconductor-metal photodetectors (MSM-PDs) with a low-temperature AlN (LTAlN) layer and inductively coupled plasma (ICP) recessed electrodes were successfully fabricated. Compared with the conventional MSM-PDs, it was found that the measured photocurrent was much larger for the MSM-PD with the LT-AlN layer and ICP recessed electrodes. The responsivity of the MSM-PD with the LT-AlN layer and ICP recessed electrodes was also found to be larger, which could be attributed to the ICPetching-induced photoconductive gain.

AB - Al0.16Ga0.84N 320nm near-solar-blind ultraviolet (UV) metal-semiconductor-metal photodetectors (MSM-PDs) with a low-temperature AlN (LTAlN) layer and inductively coupled plasma (ICP) recessed electrodes were successfully fabricated. Compared with the conventional MSM-PDs, it was found that the measured photocurrent was much larger for the MSM-PD with the LT-AlN layer and ICP recessed electrodes. The responsivity of the MSM-PD with the LT-AlN layer and ICP recessed electrodes was also found to be larger, which could be attributed to the ICPetching-induced photoconductive gain.

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AlGaN metal-semiconductor-metal photodetectors with low-temperature AlN cap layer and recessed electrodes

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