AlGaN MSM photodetectors with recess-etched LT-AlGaN cap layers

H. Hung, Shoou-Jinn Chang, Yu-Cheng Lin, H. Kuan, R. M. Lin

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

AlGaN metal-semiconductor-metal photodetectors with recess-etched low temperature (LT)-AlGaN cap layers were fabricated. It was found that photocurrent can be enhanced and a sharp cut-off can be achieved by etching away the LT-AlGaN cap layer in the light absorption region while keeping the LT-AIGaN cap layer under the contact electrodes. It was also found that dark leakage current can be reduced by passivating the damaged surface with SiO 2 film. Furthermore, it was found that, a photocurrent to dark current contrast ratio of 688 and ultraviolet to visible contrast ratio of 141 was achieved from the recess-etched photodetector with passivation.

原文English
頁(從 - 到)147-149
頁數3
期刊IET Optoelectronics
1
發行號4
DOIs
出版狀態Published - 2007 九月 11

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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