AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates

Shoou-Jinn Chang, T. K. Ko, Jinn-Kong Sheu, S. C. Shei, Wei-Chi Lai, Y. Z. Chiou, Yu-Cheng Lin, C. S. Chang, W. S. Chen, C. F. Shen

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14 引文 斯高帕斯(Scopus)

摘要

AlGaN ultraviolet metal-semiconductor-metal photodetectors (PDs) with low temperature (LT)-AlN and LT-GaN cap layers were prepared on Si substrates. Unlike PDs prepared on sapphire substrates, no markedly reduction in dark current was observed from the PD with LT-GaN cap layer. With an incident wavelength of 305 nm and an applied bias of 5 V, it was found that peak responsivities were 0.02, 0.005 and 0.007 A/W for the PDs with LT-AlN cap layer, with LT-GaN cap layer and without cap layer, respectively. The corresponding detectivities were 2.2 × 1010, 1.36 × 1010 and 1.55 × 1010 cm Hz0.5 W-1, respectively.

原文English
頁(從 - 到)502-506
頁數5
期刊Sensors and Actuators, A: Physical
135
發行號2
DOIs
出版狀態Published - 2007 四月 15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 儀器
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 金屬和合金
  • 電氣與電子工程

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