AlGaN ultraviolet metal-semiconductor-metal photodetectors with low-temperature-grown cap layers

Shoou-Jinn Chang, Hung Hung, Yi Chao Lin, Ming Hsien Wu, Hon Kuan, Ray Ming Lin

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

We report the fabrication of AlGaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with low temperature (LT)-AlGaN and LT-GaN cap layers. It was found that the dark currents were 8.3 × 10-9, 3.3 × 10-12, and 1.1 × 10-12A under 5 V applied bias while the effective Schottky barrier heights were 0.781, 0.992, and 0.998 eV for the AlGaN photodetectors without a cap layer, with a LT-GaN cap layer and with a LT-AlGaN cap layer, respectively. It was also found that the maximum responsivities were 0.0361. 0.0328. and 0.0315 A/W for the AlGaN photodetectors without the cap layer, with the LT-GaN cap layer and with the LT-AlGaN cap layer, respectively.

原文English
頁(從 - 到)2471-2473
頁數3
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
46
發行號4 B
DOIs
出版狀態Published - 2007 四月 24

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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