AlGaN/AlN/GaN MOS-HEMTs with Al2O3 gate dielectric formed by using ozone water oxidation technique

C. S. Lee, H. Y. Liu, Wei-Chou Hsu, T. T. Wu, H. S. Huang, S. F. Chen, Y. C. Yang, B. C. Chiang, H. C. Chang

研究成果: Conference contribution

摘要

This work presents Al0.3Ga0.7N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k Al2O3 gate dielectric. The present AlGaN/AlN/GaN MOS-HEMT design (the control Schottky-gate HEMT) has showed two-terminal gate-drain breakdown voltage (BVGD)/turn-on voltage (Von) of -146.6/1.12 (-96.4/0.98) V, maximum extrinsic transconductance (gm, max) of 167.3 (124.2) mS/mm, saturated IDS density at VGS = 0 V (IDSS0) of 701.4 (538.2) mA/mm, maximum IDS density (IDS, max) of 927.9 (646) mA/mm, AV of 211.8 (172.5), unity-gain cut-off frequency (fT) of 16.8 (11) GHz, maximum oscillation frequency (fmax) of 18.8 (14) GHz, 2.4-GHz output power (Pout) of 17.2 (15.7) dBm, power gain (GS) of 14.1 (13.4) dB, and power-added efficiency (PAE) of 32.2% (27.4%). Consequently, superior improvements of 52.2% in BVGD, 43.6% in IDS, max, 34.7% gm, max, and 52.7%/34.3% in fT/fmax are achieved as compared with a control HEMT device.

原文English
主出版物標題2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面194-196
頁數3
ISBN(電子)9781479944033
DOIs
出版狀態Published - 2015 八月 14
事件11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 - Sydney, Australia
持續時間: 2015 六月 92015 六月 12

出版系列

名字Proceedings of the International Conference on Power Electronics and Drive Systems
2015-August

Other

Other11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015
國家Australia
城市Sydney
期間15-06-0915-06-12

指紋

Gate dielectrics
High electron mobility transistors
Ozone
Oxidation
Metals
Water
Gates (transistor)
Cutoff frequency
Transconductance
Electric breakdown
Oxide semiconductors
Electric potential
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此文

Lee, C. S., Liu, H. Y., Hsu, W-C., Wu, T. T., Huang, H. S., Chen, S. F., ... Chang, H. C. (2015). AlGaN/AlN/GaN MOS-HEMTs with Al2O3 gate dielectric formed by using ozone water oxidation technique. 於 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015 (頁 194-196). [7203397] (Proceedings of the International Conference on Power Electronics and Drive Systems; 卷 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PEDS.2015.7203397
Lee, C. S. ; Liu, H. Y. ; Hsu, Wei-Chou ; Wu, T. T. ; Huang, H. S. ; Chen, S. F. ; Yang, Y. C. ; Chiang, B. C. ; Chang, H. C. / AlGaN/AlN/GaN MOS-HEMTs with Al2O3 gate dielectric formed by using ozone water oxidation technique. 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 頁 194-196 (Proceedings of the International Conference on Power Electronics and Drive Systems).
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title = "AlGaN/AlN/GaN MOS-HEMTs with Al2O3 gate dielectric formed by using ozone water oxidation technique",
abstract = "This work presents Al0.3Ga0.7N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k Al2O3 gate dielectric. The present AlGaN/AlN/GaN MOS-HEMT design (the control Schottky-gate HEMT) has showed two-terminal gate-drain breakdown voltage (BVGD)/turn-on voltage (Von) of -146.6/1.12 (-96.4/0.98) V, maximum extrinsic transconductance (gm, max) of 167.3 (124.2) mS/mm, saturated IDS density at VGS = 0 V (IDSS0) of 701.4 (538.2) mA/mm, maximum IDS density (IDS, max) of 927.9 (646) mA/mm, AV of 211.8 (172.5), unity-gain cut-off frequency (fT) of 16.8 (11) GHz, maximum oscillation frequency (fmax) of 18.8 (14) GHz, 2.4-GHz output power (Pout) of 17.2 (15.7) dBm, power gain (GS) of 14.1 (13.4) dB, and power-added efficiency (PAE) of 32.2{\%} (27.4{\%}). Consequently, superior improvements of 52.2{\%} in BVGD, 43.6{\%} in IDS, max, 34.7{\%} gm, max, and 52.7{\%}/34.3{\%} in fT/fmax are achieved as compared with a control HEMT device.",
author = "Lee, {C. S.} and Liu, {H. Y.} and Wei-Chou Hsu and Wu, {T. T.} and Huang, {H. S.} and Chen, {S. F.} and Yang, {Y. C.} and Chiang, {B. C.} and Chang, {H. C.}",
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language = "English",
series = "Proceedings of the International Conference on Power Electronics and Drive Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
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Lee, CS, Liu, HY, Hsu, W-C, Wu, TT, Huang, HS, Chen, SF, Yang, YC, Chiang, BC & Chang, HC 2015, AlGaN/AlN/GaN MOS-HEMTs with Al2O3 gate dielectric formed by using ozone water oxidation technique. 於 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015., 7203397, Proceedings of the International Conference on Power Electronics and Drive Systems, 卷 2015-August, Institute of Electrical and Electronics Engineers Inc., 頁 194-196, 11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015, Sydney, Australia, 15-06-09. https://doi.org/10.1109/PEDS.2015.7203397

AlGaN/AlN/GaN MOS-HEMTs with Al2O3 gate dielectric formed by using ozone water oxidation technique. / Lee, C. S.; Liu, H. Y.; Hsu, Wei-Chou; Wu, T. T.; Huang, H. S.; Chen, S. F.; Yang, Y. C.; Chiang, B. C.; Chang, H. C.

2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 194-196 7203397 (Proceedings of the International Conference on Power Electronics and Drive Systems; 卷 2015-August).

研究成果: Conference contribution

TY - GEN

T1 - AlGaN/AlN/GaN MOS-HEMTs with Al2O3 gate dielectric formed by using ozone water oxidation technique

AU - Lee, C. S.

AU - Liu, H. Y.

AU - Hsu, Wei-Chou

AU - Wu, T. T.

AU - Huang, H. S.

AU - Chen, S. F.

AU - Yang, Y. C.

AU - Chiang, B. C.

AU - Chang, H. C.

PY - 2015/8/14

Y1 - 2015/8/14

N2 - This work presents Al0.3Ga0.7N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k Al2O3 gate dielectric. The present AlGaN/AlN/GaN MOS-HEMT design (the control Schottky-gate HEMT) has showed two-terminal gate-drain breakdown voltage (BVGD)/turn-on voltage (Von) of -146.6/1.12 (-96.4/0.98) V, maximum extrinsic transconductance (gm, max) of 167.3 (124.2) mS/mm, saturated IDS density at VGS = 0 V (IDSS0) of 701.4 (538.2) mA/mm, maximum IDS density (IDS, max) of 927.9 (646) mA/mm, AV of 211.8 (172.5), unity-gain cut-off frequency (fT) of 16.8 (11) GHz, maximum oscillation frequency (fmax) of 18.8 (14) GHz, 2.4-GHz output power (Pout) of 17.2 (15.7) dBm, power gain (GS) of 14.1 (13.4) dB, and power-added efficiency (PAE) of 32.2% (27.4%). Consequently, superior improvements of 52.2% in BVGD, 43.6% in IDS, max, 34.7% gm, max, and 52.7%/34.3% in fT/fmax are achieved as compared with a control HEMT device.

AB - This work presents Al0.3Ga0.7N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k Al2O3 gate dielectric. The present AlGaN/AlN/GaN MOS-HEMT design (the control Schottky-gate HEMT) has showed two-terminal gate-drain breakdown voltage (BVGD)/turn-on voltage (Von) of -146.6/1.12 (-96.4/0.98) V, maximum extrinsic transconductance (gm, max) of 167.3 (124.2) mS/mm, saturated IDS density at VGS = 0 V (IDSS0) of 701.4 (538.2) mA/mm, maximum IDS density (IDS, max) of 927.9 (646) mA/mm, AV of 211.8 (172.5), unity-gain cut-off frequency (fT) of 16.8 (11) GHz, maximum oscillation frequency (fmax) of 18.8 (14) GHz, 2.4-GHz output power (Pout) of 17.2 (15.7) dBm, power gain (GS) of 14.1 (13.4) dB, and power-added efficiency (PAE) of 32.2% (27.4%). Consequently, superior improvements of 52.2% in BVGD, 43.6% in IDS, max, 34.7% gm, max, and 52.7%/34.3% in fT/fmax are achieved as compared with a control HEMT device.

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U2 - 10.1109/PEDS.2015.7203397

DO - 10.1109/PEDS.2015.7203397

M3 - Conference contribution

AN - SCOPUS:84951983937

T3 - Proceedings of the International Conference on Power Electronics and Drive Systems

SP - 194

EP - 196

BT - 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Lee CS, Liu HY, Hsu W-C, Wu TT, Huang HS, Chen SF 等. AlGaN/AlN/GaN MOS-HEMTs with Al2O3 gate dielectric formed by using ozone water oxidation technique. 於 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 194-196. 7203397. (Proceedings of the International Conference on Power Electronics and Drive Systems). https://doi.org/10.1109/PEDS.2015.7203397