AlGaN/AlN/GaN MOS-HEMTs with Al2O3 gate dielectric formed by using ozone water oxidation technique

C. S. Lee; H. Y. Liu; W. C. Hsu; T. T. Wu; H. S. Huang; S. F. Chen; Y. C. Yang; B. C. Chiang; H. C. Chang

doi:10.1109/PEDS.2015.7203397

AlGaN/AlN/GaN MOS-HEMTs with Al₂O₃ gate dielectric formed by using ozone water oxidation technique

C. S. Lee, H. Y. Liu, W. C. Hsu, T. T. Wu, H. S. Huang, S. F. Chen, Y. C. Yang, B. C. Chiang, H. C. Chang

研究成果: Conference contribution

摘要

This work presents Al_0.3Ga_0.7N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k Al₂O₃ gate dielectric. The present AlGaN/AlN/GaN MOS-HEMT design (the control Schottky-gate HEMT) has showed two-terminal gate-drain breakdown voltage (BV_GD)/turn-on voltage (V_on) of -146.6/1.12 (-96.4/0.98) V, maximum extrinsic transconductance (g_{m, max}) of 167.3 (124.2) mS/mm, saturated I_DS density at V_GS = 0 V (I_DSS0) of 701.4 (538.2) mA/mm, maximum I_DS density (I_{DS, max}) of 927.9 (646) mA/mm, A_V of 211.8 (172.5), unity-gain cut-off frequency (f_T) of 16.8 (11) GHz, maximum oscillation frequency (f_max) of 18.8 (14) GHz, 2.4-GHz output power (P_out) of 17.2 (15.7) dBm, power gain (G_S) of 14.1 (13.4) dB, and power-added efficiency (PAE) of 32.2% (27.4%). Consequently, superior improvements of 52.2% in BV_GD, 43.6% in I_{DS, max}, 34.7% g_{m, max}, and 52.7%/34.3% in f_T/f_max are achieved as compared with a control HEMT device.

原文	English
主出版物標題	2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	194-196
頁數	3
ISBN（電子）	9781479944033
DOIs	https://doi.org/10.1109/PEDS.2015.7203397
出版狀態	Published - 2015 8月 14
事件	11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 - Sydney, Australia 持續時間: 2015 6月 9 → 2015 6月 12

出版系列

名字	Proceedings of the International Conference on Power Electronics and Drive Systems
卷	2015-August

Other

Other	11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015
國家/地區	Australia
城市	Sydney
期間	15-06-09 → 15-06-12

All Science Journal Classification (ASJC) codes

電氣與電子工程

存取文件

10.1109/PEDS.2015.7203397

其它文件與鏈接

引用此

Lee, C. S., Liu, H. Y., Hsu, W. C., Wu, T. T., Huang, H. S., Chen, S. F., Yang, Y. C., Chiang, B. C., & Chang, H. C. (2015). AlGaN/AlN/GaN MOS-HEMTs with Al₂O₃ gate dielectric formed by using ozone water oxidation technique. 於 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015 (頁 194-196). 文章 7203397 (Proceedings of the International Conference on Power Electronics and Drive Systems; 卷 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PEDS.2015.7203397

Lee, C. S. ; Liu, H. Y. ; Hsu, W. C. 等. / AlGaN/AlN/GaN MOS-HEMTs with Al₂O₃ gate dielectric formed by using ozone water oxidation technique. 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 頁 194-196 (Proceedings of the International Conference on Power Electronics and Drive Systems).

@inproceedings{7ed473cd8f0c4adc8384a63d858bf2b0,

title = "AlGaN/AlN/GaN MOS-HEMTs with Al2O3 gate dielectric formed by using ozone water oxidation technique",

abstract = "This work presents Al0.3Ga0.7N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k Al2O3 gate dielectric. The present AlGaN/AlN/GaN MOS-HEMT design (the control Schottky-gate HEMT) has showed two-terminal gate-drain breakdown voltage (BVGD)/turn-on voltage (Von) of -146.6/1.12 (-96.4/0.98) V, maximum extrinsic transconductance (gm, max) of 167.3 (124.2) mS/mm, saturated IDS density at VGS = 0 V (IDSS0) of 701.4 (538.2) mA/mm, maximum IDS density (IDS, max) of 927.9 (646) mA/mm, AV of 211.8 (172.5), unity-gain cut-off frequency (fT) of 16.8 (11) GHz, maximum oscillation frequency (fmax) of 18.8 (14) GHz, 2.4-GHz output power (Pout) of 17.2 (15.7) dBm, power gain (GS) of 14.1 (13.4) dB, and power-added efficiency (PAE) of 32.2% (27.4%). Consequently, superior improvements of 52.2% in BVGD, 43.6% in IDS, max, 34.7% gm, max, and 52.7%/34.3% in fT/fmax are achieved as compared with a control HEMT device.",

author = "Lee, {C. S.} and Liu, {H. Y.} and Hsu, {W. C.} and Wu, {T. T.} and Huang, {H. S.} and Chen, {S. F.} and Yang, {Y. C.} and Chiang, {B. C.} and Chang, {H. C.}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015 ; Conference date: 09-06-2015 Through 12-06-2015",

year = "2015",

month = aug,

day = "14",

doi = "10.1109/PEDS.2015.7203397",

language = "English",

series = "Proceedings of the International Conference on Power Electronics and Drive Systems",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "194--196",

booktitle = "2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015",

address = "United States",

}

Lee, CS, Liu, HY, Hsu, WC, Wu, TT, Huang, HS, Chen, SF, Yang, YC, Chiang, BC & Chang, HC 2015, AlGaN/AlN/GaN MOS-HEMTs with Al₂O₃ gate dielectric formed by using ozone water oxidation technique. 於 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015., 7203397, Proceedings of the International Conference on Power Electronics and Drive Systems, 卷 2015-August, Institute of Electrical and Electronics Engineers Inc., 頁 194-196, 11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015, Sydney, Australia, 15-06-09. https://doi.org/10.1109/PEDS.2015.7203397

AlGaN/AlN/GaN MOS-HEMTs with Al₂O₃ gate dielectric formed by using ozone water oxidation technique. / Lee, C. S.; Liu, H. Y.; Hsu, W. C. 等.
2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 194-196 7203397 (Proceedings of the International Conference on Power Electronics and Drive Systems; 卷 2015-August).

研究成果: Conference contribution

TY - GEN

T1 - AlGaN/AlN/GaN MOS-HEMTs with Al2O3 gate dielectric formed by using ozone water oxidation technique

AU - Lee, C. S.

AU - Liu, H. Y.

AU - Hsu, W. C.

AU - Wu, T. T.

AU - Huang, H. S.

AU - Chen, S. F.

AU - Yang, Y. C.

AU - Chiang, B. C.

AU - Chang, H. C.

PY - 2015/8/14

Y1 - 2015/8/14

N2 - This work presents Al0.3Ga0.7N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k Al2O3 gate dielectric. The present AlGaN/AlN/GaN MOS-HEMT design (the control Schottky-gate HEMT) has showed two-terminal gate-drain breakdown voltage (BVGD)/turn-on voltage (Von) of -146.6/1.12 (-96.4/0.98) V, maximum extrinsic transconductance (gm, max) of 167.3 (124.2) mS/mm, saturated IDS density at VGS = 0 V (IDSS0) of 701.4 (538.2) mA/mm, maximum IDS density (IDS, max) of 927.9 (646) mA/mm, AV of 211.8 (172.5), unity-gain cut-off frequency (fT) of 16.8 (11) GHz, maximum oscillation frequency (fmax) of 18.8 (14) GHz, 2.4-GHz output power (Pout) of 17.2 (15.7) dBm, power gain (GS) of 14.1 (13.4) dB, and power-added efficiency (PAE) of 32.2% (27.4%). Consequently, superior improvements of 52.2% in BVGD, 43.6% in IDS, max, 34.7% gm, max, and 52.7%/34.3% in fT/fmax are achieved as compared with a control HEMT device.

AB - This work presents Al0.3Ga0.7N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs), grown on the Si substrate, with high-k Al2O3 gate dielectric. The present AlGaN/AlN/GaN MOS-HEMT design (the control Schottky-gate HEMT) has showed two-terminal gate-drain breakdown voltage (BVGD)/turn-on voltage (Von) of -146.6/1.12 (-96.4/0.98) V, maximum extrinsic transconductance (gm, max) of 167.3 (124.2) mS/mm, saturated IDS density at VGS = 0 V (IDSS0) of 701.4 (538.2) mA/mm, maximum IDS density (IDS, max) of 927.9 (646) mA/mm, AV of 211.8 (172.5), unity-gain cut-off frequency (fT) of 16.8 (11) GHz, maximum oscillation frequency (fmax) of 18.8 (14) GHz, 2.4-GHz output power (Pout) of 17.2 (15.7) dBm, power gain (GS) of 14.1 (13.4) dB, and power-added efficiency (PAE) of 32.2% (27.4%). Consequently, superior improvements of 52.2% in BVGD, 43.6% in IDS, max, 34.7% gm, max, and 52.7%/34.3% in fT/fmax are achieved as compared with a control HEMT device.

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U2 - 10.1109/PEDS.2015.7203397

DO - 10.1109/PEDS.2015.7203397

M3 - Conference contribution

AN - SCOPUS:84951983937

T3 - Proceedings of the International Conference on Power Electronics and Drive Systems

SP - 194

EP - 196

BT - 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2015

Y2 - 9 June 2015 through 12 June 2015

ER -

Lee CS, Liu HY, Hsu WC, Wu TT, Huang HS, Chen SF 等. AlGaN/AlN/GaN MOS-HEMTs with Al₂O₃ gate dielectric formed by using ozone water oxidation technique. 於 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 194-196. 7203397. (Proceedings of the International Conference on Power Electronics and Drive Systems). doi: 10.1109/PEDS.2015.7203397