AlGaN/GaN heterostructure field-effect transistor with semi-insulating Mg-doped GaN cap layer

K. H. Lee, P. C. Chang, S. J. Chang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

We report the fabrication of AlGaN/GaN heterostructure field-effect transistor (HFET) with in situ grown semi-insulatingMg-doped GaN (GaN:Mg) cap layer. Without activation, the GaN:Mg film is known to be highly resistive and shown to reduce leakage current in AlGaN/GaN heterostructure. With 1-m-long gate length at drain-voltage of 10V, the presented HFET exhibited a drain-source current in saturation (IDSS) of 735 mA/mm and a peak transconductance gm(max) of 170 mS/mm, while the current gain cutoff frequency (fT) and maximum frequency of oscillation (fmax) were 20.5 and 33.3 GHz, respectively.

原文English
頁(從 - 到)Q14-Q16
期刊ECS Solid State Letters
1
發行號1
DOIs
出版狀態Published - 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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