AlGaN/GaN heterostructure field-effect transistors with multi-Mg xN y/GaN buffer and Photo-CVD SiO 2 gate dielectric

K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

We report the fabrication of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with multi-Mg xN y/GaN as an epitaxial buffer and using SiO 2 dielectric by photochemical vapor deposition (Photo-CVD) simultaneously for surface passivation and as gate insulator. High quality SiO 2 dielectric was successfully deposited onto AlGaN by Photo-CVD compared with the traditional plasma enhanced chemical vapor deposition (PE-CVD). Compared to conventional AlGaN/GaN HFET, the MOS-HFET with Photo-CVD SiO 2 exhibits lower leakage current, higher breakdown voltage and channel current. It was also observed that our MOS-HFETs presented pure 1/f noise with smaller trapping effects and improved immunity to the RF current collapse.

原文English
頁(從 - 到)38-43
頁數6
期刊Solid-State Electronics
72
DOIs
出版狀態Published - 2012 6月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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