AlGaN/GaN heterostructure grown on 1∘-tilt sapphire substrate by MOCVD

K. T. Lam, C. L. Yu, P. C. Chang, U. H. Liaw, S. J. Chang, J. C. Lin

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

AlGaN/GaN epitaxial layers were grown on 0{ring operator}-tilt and 1{ring operator}-tilt sapphire substrates by metalorganic chemical vapor deposition (MOCVD). With exactly the same growth conditions, it was found that dislocation density was smaller and crystal quality was better for the AlGaN/GaN epitaxial layers prepared on 1{ring operator}-tilt sapphire substrate. We also found that AlGaN/GaN epitaxial layers on 1{ring operator}-tilt sapphire substrate were grown with step growth mode while those on 0{ring operator}-tilt substrate were grown with two-dimensional island growth. From the temperature-dependent mobility, it was found that crystal quality of the AlGaN/GaN epitaxial layer prepared on 1{ring operator}-tilt sapphire substrate is better.

原文English
頁(從 - 到)147-152
頁數6
期刊Superlattices and Microstructures
43
發行號3
DOIs
出版狀態Published - 2008 三月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 電氣與電子工程

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