AlGaN/GaN HFET power amplifier integrated with microstrip antenna for RF front-end applications

Younkyu Chung, Cynthia Y. Hang, Shujun Cai, Yongxi Qian, Cheng P. Wen, Kang L. Wang, Tatsuo Itoh

研究成果: Article同行評審

48 引文 斯高帕斯(Scopus)

摘要

In this paper, a high-efficiency and compact AlGaN/GaN heterojunction field-effect transistor (HFET) power amplifier integrated with a microstrip antenna at 7.25 GHz is presented for RF front-end circuit applications. A microstrip circular sector antenna is employed as both a radiator and frequency-dependent output load. Higher order harmonics from the HFET in nonlinear operation are reactively terminated because of the harmonic termination characteristic of the antenna. Based on the optimum load impedance measured by a load-pull measurement setup, the AlGaN/GaN HFET power amplifier has been designed and fabricated at 7.25 Ghz using the active integrated antenna concept. In this design approach, the measured antenna impedance is directly transformed to the optimum load impedance for maximum efficiency. The power amplifier with 1-mm gate periphery shows 42% peak power-added efficiency and 30.3-dBm saturated output power with a linear gain of 8 dB, which is in reasonably good agreement with measured discrete HFET load-pull data. Due to the antenna's characteristics, better than 30-Db harmonic suppression has been achieved at both the second and third harmonic frequencies in both the E- and H-planes. To the authors' best knowledge, this is the first demonstration of a high-frequency AlGaN/GaN HFET power amplifier integrated with an antenna.

原文English
頁(從 - 到)653-659
頁數7
期刊IEEE Transactions on Microwave Theory and Techniques
51
發行號2 II
DOIs
出版狀態Published - 2003 二月

All Science Journal Classification (ASJC) codes

  • 輻射
  • 凝聚態物理學
  • 電氣與電子工程

指紋

深入研究「AlGaN/GaN HFET power amplifier integrated with microstrip antenna for RF front-end applications」主題。共同形成了獨特的指紋。

引用此