AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures

K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su, C. L. Yu

研究成果: Article

13 引文 (Scopus)

摘要

We report an AlGaN/GaN high electron mobility transistors (HEMTs) based on InGaN/GaN multiquantum-well (MQW) structure. When InGaN/GaN MQW structure was inserted, InGaN layer has an opposite piezoelectric polarization field compared to AlGaN, which results in a very sharp rise of the conduction band. The raised potential barrier can help to improve carrier confinement and obtain a larger main peak transconductance of 111 mS/mm and satellite peak transconductance of 24 mS/mm, corresponding to AlGaN/GaN heterojunction and InGaN layer. MQW-based metal-oxide-semiconductor-HEMT was also fabricated and significantly reduced the leakage current and increased transconductance as a result of passivation by Ta2 O5 gate oxide.

原文English
文章編號212105
期刊Applied Physics Letters
96
發行號21
DOIs
出版狀態Published - 2010 五月 24

指紋

transconductance
high electron mobility transistors
metal oxide semiconductors
passivity
heterojunctions
conduction bands
leakage
oxides
polarization

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

引用此文

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title = "AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures",
abstract = "We report an AlGaN/GaN high electron mobility transistors (HEMTs) based on InGaN/GaN multiquantum-well (MQW) structure. When InGaN/GaN MQW structure was inserted, InGaN layer has an opposite piezoelectric polarization field compared to AlGaN, which results in a very sharp rise of the conduction band. The raised potential barrier can help to improve carrier confinement and obtain a larger main peak transconductance of 111 mS/mm and satellite peak transconductance of 24 mS/mm, corresponding to AlGaN/GaN heterojunction and InGaN layer. MQW-based metal-oxide-semiconductor-HEMT was also fabricated and significantly reduced the leakage current and increased transconductance as a result of passivation by Ta2 O5 gate oxide.",
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AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures. / Lee, K. H.; Chang, P. C.; Chang, S. J.; Su, Y. K.; Yu, C. L.

於: Applied Physics Letters, 卷 96, 編號 21, 212105, 24.05.2010.

研究成果: Article

TY - JOUR

T1 - AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures

AU - Lee, K. H.

AU - Chang, P. C.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Yu, C. L.

PY - 2010/5/24

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N2 - We report an AlGaN/GaN high electron mobility transistors (HEMTs) based on InGaN/GaN multiquantum-well (MQW) structure. When InGaN/GaN MQW structure was inserted, InGaN layer has an opposite piezoelectric polarization field compared to AlGaN, which results in a very sharp rise of the conduction band. The raised potential barrier can help to improve carrier confinement and obtain a larger main peak transconductance of 111 mS/mm and satellite peak transconductance of 24 mS/mm, corresponding to AlGaN/GaN heterojunction and InGaN layer. MQW-based metal-oxide-semiconductor-HEMT was also fabricated and significantly reduced the leakage current and increased transconductance as a result of passivation by Ta2 O5 gate oxide.

AB - We report an AlGaN/GaN high electron mobility transistors (HEMTs) based on InGaN/GaN multiquantum-well (MQW) structure. When InGaN/GaN MQW structure was inserted, InGaN layer has an opposite piezoelectric polarization field compared to AlGaN, which results in a very sharp rise of the conduction band. The raised potential barrier can help to improve carrier confinement and obtain a larger main peak transconductance of 111 mS/mm and satellite peak transconductance of 24 mS/mm, corresponding to AlGaN/GaN heterojunction and InGaN layer. MQW-based metal-oxide-semiconductor-HEMT was also fabricated and significantly reduced the leakage current and increased transconductance as a result of passivation by Ta2 O5 gate oxide.

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