AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures

K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su, C. L. Yu

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

We report an AlGaN/GaN high electron mobility transistors (HEMTs) based on InGaN/GaN multiquantum-well (MQW) structure. When InGaN/GaN MQW structure was inserted, InGaN layer has an opposite piezoelectric polarization field compared to AlGaN, which results in a very sharp rise of the conduction band. The raised potential barrier can help to improve carrier confinement and obtain a larger main peak transconductance of 111 mS/mm and satellite peak transconductance of 24 mS/mm, corresponding to AlGaN/GaN heterojunction and InGaN layer. MQW-based metal-oxide-semiconductor-HEMT was also fabricated and significantly reduced the leakage current and increased transconductance as a result of passivation by Ta2 O5 gate oxide.

原文English
文章編號212105
期刊Applied Physics Letters
96
發行號21
DOIs
出版狀態Published - 2010 五月 24

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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