AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO 2 dielectrics

Kai Hsuan Lee, Ping Chuan Chang, Shoou Jinn Chang

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

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Engineering & Materials Science

Physics & Astronomy

Chemical Compounds