AlGaN/GaN high electron mobility transistors with multi- MgxNy /GaN Buffer

P. C. Chang, K. H. Lee, Z. H. Wang, S. J. Chang

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a lowerature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

原文English
文章編號623043
期刊Journal of Nanomaterials
2014
DOIs
出版狀態Published - 2014

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)

指紋

深入研究「AlGaN/GaN high electron mobility transistors with multi- MgxNy /GaN Buffer」主題。共同形成了獨特的指紋。

引用此