AlGaN/GaN high electron mobility transistors with multi- MgxNy /GaN Buffer

P. C. Chang; K. H. Lee; Z. H. Wang; S. J. Chang

doi:10.1155/2014/623043

AlGaN/GaN high electron mobility transistors with multi- MgxNy /GaN Buffer

P. C. Chang, K. H. Lee, Z. H. Wang, S. J. Chang

微電子工程研究所

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a lowerature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

原文	English
文章編號	623043
期刊	Journal of Nanomaterials
卷	2014
DOIs	https://doi.org/10.1155/2014/623043
出版狀態	Published - 2014

All Science Journal Classification (ASJC) codes

一般材料科學

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10.1155/2014/623043

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abstract = "We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a lowerature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.",

author = "Chang, {P. C.} and Lee, {K. H.} and Wang, {Z. H.} and Chang, {S. J.}",

note = "Publisher Copyright: {\textcopyright} 2014 P. C. Chang et al.",

year = "2014",

doi = "10.1155/2014/623043",

language = "English",

volume = "2014",

journal = "Journal of Nanomaterials",

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AU - Chang, P. C.

AU - Lee, K. H.

AU - Wang, Z. H.

AU - Chang, S. J.

PY - 2014

Y1 - 2014

N2 - We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a lowerature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

AB - We report the fabrication of AlGaN/GaN high electron mobility transistors with multi-MgxNy/GaN buffer. Compared with conventional HEMT devices with a lowerature GaN buffer, smaller gate and source-drain leakage current could be achieved with this new buffer design. Consequently, the electron mobility was larger for the proposed device due to the reduction of defect density and the corresponding improvement of crystalline quality as result of using the multi-MgxNy/GaN buffer.

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JF - Journal of Nanomaterials

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ER -

AlGaN/GaN high electron mobility transistors with multi- MgxNy /GaN Buffer

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