AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer

K. H. Lee, P. C. Chang, S. J. Chang

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this study, we investigate AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer with regards to DC-, RF-, and power-performance. This earlier passivation by in-situ AlN cap layer protects the surface during processing and neutralizes the charges at the top of AlGaN interface, which leads to a higher electron density of channel and superior device characteristics.

原文English
文章編號153505
期刊Applied Physics Letters
99
發行號15
DOIs
出版狀態Published - 2011 十月 10

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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