AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer

K. H. Lee; P. C. Chang; S. J. Chang

doi:10.1063/1.3651495

AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer

K. H. Lee, P. C. Chang, S. J. Chang

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

In this study, we investigate AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer with regards to DC-, RF-, and power-performance. This earlier passivation by in-situ AlN cap layer protects the surface during processing and neutralizes the charges at the top of AlGaN interface, which leads to a higher electron density of channel and superior device characteristics.

原文	English
文章編號	153505
期刊	Applied Physics Letters
卷	99
發行號	15
DOIs	https://doi.org/10.1063/1.3651495
出版狀態	Published - 2011 10月 10

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.3651495

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@article{9519024437514c6b992e67c8c0618828,

title = "AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer",

abstract = "In this study, we investigate AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer with regards to DC-, RF-, and power-performance. This earlier passivation by in-situ AlN cap layer protects the surface during processing and neutralizes the charges at the top of AlGaN interface, which leads to a higher electron density of channel and superior device characteristics.",

author = "Lee, {K. H.} and Chang, {P. C.} and Chang, {S. J.}",

note = "Funding Information: This work was supported in part by the National Science Council under Contract NSC 100-2221-E-168-030.",

year = "2011",

month = oct,

day = "10",

doi = "10.1063/1.3651495",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer

AU - Lee, K. H.

AU - Chang, P. C.

AU - Chang, S. J.

N1 - Funding Information: This work was supported in part by the National Science Council under Contract NSC 100-2221-E-168-030.

PY - 2011/10/10

Y1 - 2011/10/10

N2 - In this study, we investigate AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer with regards to DC-, RF-, and power-performance. This earlier passivation by in-situ AlN cap layer protects the surface during processing and neutralizes the charges at the top of AlGaN interface, which leads to a higher electron density of channel and superior device characteristics.

AB - In this study, we investigate AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer with regards to DC-, RF-, and power-performance. This earlier passivation by in-situ AlN cap layer protects the surface during processing and neutralizes the charges at the top of AlGaN interface, which leads to a higher electron density of channel and superior device characteristics.

UR - http://www.scopus.com/inward/record.url?scp=80054978629&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80054978629&partnerID=8YFLogxK

U2 - 10.1063/1.3651495

DO - 10.1063/1.3651495

M3 - Article

AN - SCOPUS:80054978629

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 153505

ER -

AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer

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