AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistors (MOSHFETs) with liquid phase deposited SiO2 as the insulating gate are demonstrated. A very large gate swing voltage is applied. An AlGaN/GaN MOS heterostructure FET with saturation characteristics is observed. For a gate length of 2 μm in a 5 μm channel opening with a gate width of 100 μm, MOSHFET with transconductance and maximum drain current of 78 mS/mm and 720 mA/mm, respectively, is achieved.
|頁（從 - 到）||L748-L750|
|期刊||Japanese Journal of Applied Physics, Part 2: Letters|
|出版狀態||Published - 2002 七月 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)