Algan/gan metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition Sio2 gate oxide

C. K. Wang, Y. Z. Chiou, S. J. Chang, Y. K. Su, B. R. Huang, T. K. Lin, S. C. Chen

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

High-quality SiO2 was successfully deposited onto GaN by photo-chemical-vapor deposition (photo-CVD) using a D2 lamp as the excitation source. The AlGaN/GaN metal-oxide semiconductor, heterostructure field-effect transistors (MOSHFETs) were also fabricated with photo-CVD oxide as the insulating layer. Compared with AlGaN/GaN metal-semiconductor HFETs (MESHFETs) with similar structure, we found that we could reduce the gate-leakage current by more than four orders of magnitude by inserting the photo-CVD oxide layer in between the AlGaN/GaN and the gate metal. With a 2-μm gate, it was found that the saturated Ids, maximum gm, and gate-voltage swing (GVS) of the fabricated nitride-based MOSHFET were 512 mA/mm, 90.7 mS/mm, and 6 V, respectively.

原文English
頁(從 - 到)407-410
頁數4
期刊Journal of Electronic Materials
32
發行號5
DOIs
出版狀態Published - 2003 五月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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