AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor with liquid phase deposited Al2 O3 as gate dielectric

Sarbani Basu, Pramod K. Singh, Po Wen Sze, Yeong-Her Wang

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

The performance of n-GaN/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) with a 20 nm thick Al2 O3 gate oxide deposited using the low temperature liquid phase deposition technique is demonstrated. MOSHEMTs exhibit a 23% increase in saturation drain current density, 13% higher extrinsic transconductance, and a lower gate leakage current of 3 orders of magnitude in comparison with high electron mobility transistors. The stability and the interface quality of Al2 O3 /n-GaN by this alternative process are discussed. The sheet carrier concentration and Hall mobility are also estimated from the channel conductance under the gate, which is comparable with those measured by the van der Pauw method before the device processing.

原文English
期刊Journal of the Electrochemical Society
157
發行號10
DOIs
出版狀態Published - 2010 9月 7

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

指紋

深入研究「AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor with liquid phase deposited Al2 O3 as gate dielectric」主題。共同形成了獨特的指紋。

引用此