AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor with liquid phase deposited Al2 O3 as gate dielectric

Sarbani Basu, Pramod K. Singh, Po Wen Sze, Yeong-Her Wang

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

指紋 深入研究「AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor with liquid phase deposited Al<sub>2</sub> O<sub>3</sub> as gate dielectric」主題。共同形成了獨特的指紋。

Chemical Compounds

Engineering & Materials Science