AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor with liquid phase deposited Al₂ O₃ as gate dielectric

Engineering & Materials Science

• Gate dielectrics 100%
• Oxide semiconductors 83%
• High electron mobility transistors 81%
• Hall mobility 47%
• Liquids 47%
• Metals 45%
• Carrier concentration 33%
• Transconductance 28%
• Leakage currents 25%
• Current density 22%
• Oxides 20%
• Temperature 9%

Chemical Compounds

• Electron Mobility 84%
• Dielectric Material 61%
• Liquid 38%
• Drain Current 36%
• Transconductance 36%
• Leakage Current 30%
• Deposition Technique 25%
• Conductance 22%
• Compound Mobility 17%
• Current Density 17%
• Oxide 12%